Evaluation of LaB_6 Thin Film as Low-Work-Function Gate for MOSFET Operated at Low Temperature
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-09-20
著者
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Masu Kazuya
Integrated Research Institute
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Masu Kazuya
Research Institute Of Electrical Communication Tohoku University
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TSUBOUCHI Kazuo
Research Institute of Electrical Communication, Tohoku University
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Mikoshiba N
Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L
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Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L
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Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University
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YOKOYAMA Michio
Research Institute of Electrical Communication, Tohoku University
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Tsubouchi K
Tohoku Univ. Sendai Jpn
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Yokoyama M
Kawasaki Heavy Ind. Ltd. Chiba Jpn
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Tsubouchi Kazuo
Research Institute Of Electrical Communicaiton Tohoku University
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YI You-Wen
Research Institute of Electrical Communication, Tohoku University
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Yi You-wen
Hewlett-packard Laboratories Japan
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Mikoshiba Nobuo
Research Institute Of Electorical Communication Tohoku University
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TSUBOUCHI Kazuo
Research Institute of Electric Communication (RIEC), Tohoku University
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