RF Passive Components Using Metal Line on Si CMOS(<Special Section>Analog Circuit and Device Technologies)
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概要
- 論文の詳細を見る
This paper discusses the design and performance of on-chip passive components of transmission lines (TR) and inductors. First, the measurement technique of on chip passives is discussed. A transmission line that can be used for Gbps signal propagation on Si CMOS is examined. As a high density transmission line structure of diagonal-pair differential TR line is described. Also, a circuit and TR line is introduced for above 10Gbps signal propagation. The on-chip inductor which is a key passive component in RF application of Si CMOS technology is discussed. We examine some on-chip inductors that have been developed in our group: small area inductor, high performance inductor using WL-CSP (Wafer-Level Chip-Size-Packaging) technology. Finally, a wide tuning range LC-VCO using a variable inductor for RF reconfigurable circuit is introduced.
- 社団法人電子情報通信学会の論文
- 2006-06-01
著者
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Masu K
Research Institute Of Electrical Communication Tohoku University
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Masu Kazuya
Integrated Research Institute
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Ito H
National Agricultural Res. Organization Mie Jpn
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Okada Kenichi
Integrated Research Institute Tokyo Institute Of Technology
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Okada K
Communications Research Laboratory Ministry Of Posts And Telecommunications
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Okada K
The Design Technology Development Laboratory Ic Group Sharp Corporation
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Masu Kazuya
東工大
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Ito Hiroyuki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Itoh H
Osaka Univ. Pharmaceutical Sci. Osaka Jpn
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Okada K
Keio Univ. Yokohama‐shi Jpn
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Ito H
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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ITO Hiroyuki
Integrated Research Institute, Tokyo Institute of Technology
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