Area-Selective Aluminum Patterning Using Atomic Hydrogen Resist
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概要
- 論文の詳細を見る
We have proposed atomic-scale lithographic technology using atomic hydrogen resist. The key features of the atomic hydrogen resist process are (1) patterning of monolayer-thick terminated H on a Si surface by electron beam exposure and (2) selective growth of Al on remaining terminated H by low-pressure chemical vapor deposition using (CH_3)_2AlH and H_2. In the electron-beam-exposed area, the terminated H on Si is removed and the Si surface is activated. Then the activated Si surface is oxidized in nanometer thickness in a clean-room air environment. The Al is selectively deposited on the remaining terminated-H region. A clear Al pattern has been successfully formed by the atomic hydrogen resist process.
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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Masu Kazuya
Research Institute Of Electrical Communication Tohoku University
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TSUBOUCHI Kazuo
Research Institute of Electrical Communication, Tohoku University
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Tsubouchi K
Tohoku Univ. Sendai Jpn
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Sasaki Keiichi
Research Institute Of Electrical Communication Tohoku University
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Tsubouchi Kazuo
Research Institute Of Electrical Communicaiton Tohoku University
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TSUBOUCHI Kazuo
Research Institute of Electric Communication (RIEC), Tohoku University
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