Investigation of Nonradiative States in GaAs and InP by Photoaeoustic Spectroscopy
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概要
- 論文の詳細を見る
Nonradiative states in GaAs and InP are investigated by photoacoustic spectroscopy. InGaAs, we observed (1) an increase of photoacoustic (PA) signals with a decrease of photoluminescence (PL), (2) a PA signal due to nonradiative states near the crystal surface, and (3) a PA signal due to nonradiative states in the bulk which act as absorption levels of PL. We found that the PA signal intensity in InP at the band edge is much smaller than that of GaAs.
- 社団法人応用物理学会の論文
- 1980-11-05
著者
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Wasa Kenji
Research Institute Of Electrical Communication Tohoku University
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Mikoshiba Nobuo
Research Institute Of Electorical Communication Tohoku University
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TSUBOUCHI Kazuo
Research Institute of Electric Communication (RIEC), Tohoku University
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