Effect of Potentiostatic Control on in situ STM Images of Ag and Au Electrodes in a 0.1 M KCl Solution

スポンサーリンク

概要

• 論文の詳細を見る

• We investigated the in situ STM images sequentially at the same places of Ag and Au electrodes in a 0.1 M KCl solution, as a function of a potentiostatic voltage. For the Ag electrode, by decreasing the potential, we found that the surface corrugation of the electrode varies suddenly from a flat to a rough surface around the calculated equilibrium potential of AgCl formation/reduction processes. We also found another phenomenon whereby the surface of the Ag electrode becomes more and more smooth with decreasing potential. We supposed this phenomenon to be a rearrangement of the Ag surface caused by the desorption of Cl- specific adions from the active sites. We also found that the roughness of Au surface depends on the potentiostatic voltage. This result seems to be related with the anodic dissolution/reduction processes and the desorption of Cl- specific adions.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-03-20

著者

• OKADA Takao

  Olympus Optical Co., Ltd.

• Morita Seizo

  Department Of Electronic Engineering Faculty Of Engineering Iwate University

• Mikoshiba Nobuo

  Research Institute Of Electorical Communication Tohoku University

• Morita Seizo

  Department of Electronic Engineering, Faculty of Engineering, Iwate University, Morioka 020

• Mikoshiba Nobuo

  Research Institute of Electrical Communication, Tohoku University, Sendai 980

• Okada Takao

  Olympus Optical Co., Ltd., Hachioji 192

関連論文

• Anomalous Three-LO-Phonon Assisted Cyclotron Resonance with Spin-Flip Transitions in n-InSb
• Contact Electrification on Thin SrTiO_3 Film by Atomic Force Microscope
• Submillimeter-Wave Response of Nb-YBaCuO Point-Contact Josephson Junctions Using YBaCuO Thin Films Prepared by CVD
• Simulation of Shapiro Steps in a Josephson Junction Based on the Microscopic Theory of the Tunnel Junction
• Anomalous Corrugation Height of Atomically Resolved AFM Images of a Graphite Surface
• Simultaneous Observation of Atomically Resolved AFM/STM Images of a Graphite Surface
• Surface Conductance of Metal Surfaces in Air Studied with a Force Microscope
• Submillimeter-Wave Response of Nb-YBaCuO Point-Contact Josephson Junctions : Electrical Properties of Condensed Matter
• Damping Factor of the Riedel Peak in Brikge-Type Josephoson Junctions
• Frequency Dependence of the Submillimeter-Wave Response in the Tunnel-Type and Bridge-Type Josephson Junctions
• Correlation between Types of Junction and Submillimeter-Wave Responses in Point-Contact Josephson Junctions
• Frequency Dependence of the ac Josephson Effect in Nb Point Contacts in the Submillimeter-Wave Region
• Computer Simulation of Vortex Motion in a Josephson Junction Induced by Phonon Injection
• Vortex Motion in a Josephson Junction Induced by Phonon Injection
• Construction of a Scanning Tunneling Microscope for Electrochemical Studies
• Multilayer Piezoelectric Actuators for Scanning Tunneling Microscope : High Power Ultrasonics
• Atom-selective imaging and mechanical atom manipulation using the non-contact atomic force microscope
• WS-02 ATOMIC MANIPULATION AND IDENTIFICATION USING NONCONTACT ATOMIC FORCE MICROSCOPE
• Carbon-Nanotube Tip for Highly-Reproducible Imaging of Deoxyribonucleic Acid Helical Turns by Noncontact Atomic Force Microscopy
• Structures of an Oxygen-Deficient TiO_2(110) Surface Studied by Noncontact Atomic Force Microscopy
• Missing Ag Atom on Si(111)√×√-Ag Surface Observed by Noncontact Atomic Force Microscopy
• Optical Near-Field Imaging Using the Kelvin Probe Technique
• New Computed Tomography Algorithm of Electrostatic Force Microscopy Based on the Singular Value Decomposition Combined with the Discrete Fourier Transform
• Force Imaging of Optical Near-Field Using Noncontact Mode Atomic Force Microscopy
• Simulated Computed Tomography for the Reconstruction of Vacancies Using an Atomic Force Microscope Image
• Measurement of the Evanescent Field Using Noncontact Mode Atomic Force Microscope
• Stability of Densely Contact-Electrified Charges on Thin Silicon Oxide in Air
• Feasibility Study on a Novel Type of Computerized Tomography Based on Scanning Probe Microscope
• Atomically Resolved InP(110) Surface Observed with Noncontact Ultrahigh Vacuum Atomic Force Microscope
• Atomic-Resolution Imaging of ZnSSe(110) Surface with Ultrahigh-Vacuum Atomic Force Microscope (UHV-AFM)
• Parameter Dependence of Stable State of Densely Contact-Electrified Electrons on Thin Silicon Oxide
• Potentiometry Combined with Atomic Force Microscope
• Charge Storage on Thin SrTiO_3 Film by Contact Electrification ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Growth of a Two-Dimensional Nucleus on a Cleaved(010)Surface of (NH_2CH_2COOH)_3H_2SO_4
• Time Evolution of Surface Topography arournd a Domain Wall in Ferroelectric (NH_2CH_2COOH)_3・H_2SO_4
• Fluctuation in Two-Dimensional Stick-Slip Phenomenon Observed with Two-Dimensional Frictional Force Microscope
• Observation of GaAs(110) Surface by an Ultrahigh-Vacuum Atomic Force Microscope
• Atomically Resolved Image of Cleaved GaAs(110) Surface Observed with an Ultrahigh Vacuum Atomic Force Microscope
• Observation of Atormic Defects on LiF(100) Surface with Ultrahigh Vacuum Atomic Force Microscope (UHV AFM)
• Artifact and Fact of Si(111)7 X7 Surface Images Observed with a Low Temperature Noncontact Atomic Force Microscope (LT-NC-AFM) : Surfaces, Interfaces, and Films
• Temperature Dependence of the Inelastic Scattering Time in Metallic n-GaAs
• Determination of Physical Parameters of the Anderson Localization in Metallic n-InSb
• Effects of the Anderson Localization on Magnetoconductivity in Metallic n-GaAs
• In Situ Imaging of Electrochemical Deposition of Ag on Au(111)
• Atomic Resolution Imaging on Si(100)2 × 1 and Si(100)2 × 1 : H Surfaces with Noncontact Atomic Force Microscopy
• Voltage-Dependence of Scanning Tunneling Microscopy on Titanium Surface in Air
• Atomic Images of Disordered Regions in Graphite Crystals Obtained with Scanning Tunneling Microscope
• Atomic Corrugation of Kish Graphite in Air Measured with Scanning Tunneling Microscope
• Single Crystallization of Aluminum on SiO_2 by Thermnal Annealing and Observation with Scanning μ-RHEED Microscope
• Development of Scanning μ-RHEED Microscopy for Imaging Polycrystal Grain Structure in LSI (SOLID STATE DEVICES AND MATERIALS 1)
• Theoretical Analysis for a New Package Concept : High-Speed Heat Removal for VLSI Using an AlN Heat-Spreading Layer and Microchannel Fin
• Selective Ge CVD as a Via Hole Filling Method and Self-Aligned Impurity Diffusion Microsource in Si Processing (SOLID STATE DEVICES AND MATERIALS 1)
• Time Dependent Dielectric Breakdown of Thin Silicon Oxide Using Dense Contact Electrification
• Time Evolution of Contact-Electrified Electron Dissipation on Silicon Oxide Surface Investigated Using Noncontact Atomic Force Microscope
• Spatial Distributions of Densely Contact-Electrified Charges on a Thin Silicon Oxide
• Dissipation of Contact Electrified Electrons on Dielectric Thin films with Silicon Substrate
• Oxidation Site of Polycrystalline Silicon Surface Studied Using Scanning Force / Tunneling Microscope (AFM/STM) in Air
• Simultaneous Imaging of a Graphite Surface with Atomic Force/Scanning Tunneling Microscope (AFM/STM)
• Origin of Anomalous Corrugation Height of STM Images of Graphite
• Anomalous Force Dependence of AFM Corrugation Height of a Graphite Surface in Air
• Aluminum Nitride Epitaxially Grown on Silicon: Orientation Relationships
• In Situ Observation of Electromigration in Cu Film Using Scanning μ-Reflection High-Energy Electron Diffraction Microscope
• Planarized Deposition of High-Quality Silicon Dioxide Film by Photoassisted Plasma CVD at 300℃ Using Tetraethyl Orthosilicate
• Evaluation of LaB_6 Thin Film as Low-Work-Function Gate for MOSFET Operated at Low Temperature
• Silicon Nitride Films with Low Hydrogen Content, Low Stress, Low Damage and Stoichiometric Composition by Photo-Assisted Plasma CVD
• Temperature-Scaling Theory for Low-Temperature-Operated MOSFET with Deep-Submicron Channel : Semiconductors and Semiconductor Devices
• Pyrolysis and Photolysis of Trimethylaluminum
• Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
• Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
• Nondestructive and Noncontact Evaluation of Semiconductors by Photothermal Radiometry : Photoacoustic Spectroscopy
• Observation of Nonradiative Processes in Benzene Vapor by Photoacoustic Spectroscopy
• Quasi-Nondestructive Observation of Oxidation-Induced Stacking Faults in Silicon by Photoacoustic Topography
• Images of Barrier Layer of Anodic Aluminum Oxide in Air Obtained with Scanning Tunneling Microscope
• Phonon-Assisted Cyclotron Resonance Strongly Dependent on Surface Condition in n-InSb
• Line Shape of LO-Phonon Assisted Cyclotron Resonance in n-InSb
• Nonlinear Interaction of Surface Acoustic Waves with the Josephson Junction
• Oxide Growth of Tin Films by Modified rf Plasma Oxidation Method
• Scanning Tunneling Potentiometry/Spectroscopy (STP/STS)
• Convolution and Acoustoelectric Effect by Elastic Surface Waves in Coupled Semiconductor-Piezoelectric System
• Oscillation of Two-Dimensional Modes in Transverse-Distributed-Feedback Cavity Lasers
• Heat Treatment and Steaming Effects of Silicon Oxide upon Electron Dissipation on Silicon Oxide Surface
• Contact Electrification on Thin Silicon Oxide in Vacuum
• Spatial Distribution and Its Phase Transition of Densely Contact-Electrified Electrons on a Thin Silicon Oxide
• Stable-Unstable Phase Transition of Densely Contract-Electrified Electrons on Thin Silicon Oxide
• Reproducible and Controllable Contact Electrification on a Thin Insulator
• Tunneling-Type Temperature Dependence of Critical Current in Nb-Sn Point Contact
• Effect of the Shunt Capacitance on the ac Josephson Effect in Nb Point Contacts
• Peak Shifts ot the Photo-Induced Magnetophonon Resonance in n-InSb at 4.2 K
• 4-5 μm Emissions from 1.3-μm and 1.5-μm InGaAsP/InP Lasers : Evidence for Excitations in Split-Off Valence Band
• Saturable Inter-Valence-Band Absorptions in 1.3μm-InGaAsP Lasers : B-4: LD AND LED-2
• Generation Mechanisms of Current-Injection-Induced Acoustic (CIA) Signals in Semiconductor Lasers : Photo-Acoustic Spectroscopy
• Hole-Burnings Observed at High Energy Tails in Spontaneous Emission Spectra from 1.3 μm-InGaAsP/InP Lasers
• Analysis of Intrinsic Saturable Absorption in InGaAsP/InP Diode Lasers
• Investigation of 1.3-μm InGaAsP/InP Lasers by the Measurement of Current-Injection-Induced Acoustic (CIA) Signals
• Observation of Acoustic Signals from Semiconductor Lasers
• Note on Phonon Spectroscopy with Acoustoelectric Domain and Brillouin-Scattering Technique
• Atomic Force Microscope Combined with Scanning Tunneling Microscope [AFM/STM]
• Scanning Force/Tunneling Microscopy as a Novel Technique for the Study of Nanometer-Scale Dielectric Breakdown of Silicon Oxide Layer
• Charge Dissipation on Chemically Treated Thin Silicon Oxide in Air
• Effect of Potentiostatic Control on in situ STM Images of Ag and Au Electrodes in a 0.1 M KCl Solution

もっと見る 閉じる

スポンサーリンク