Photochemical Hole Burning of Quinone Derivatives
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-02-28
著者
-
Nishimura Tadashi
Lsi Research & Development Laboratory Mitsubishi Electric Corporation
-
吉村 昌弘
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
-
Nishimura T
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
YAGYU Eiji
Central Research Laboratory, Mitsubishi Electric Corporation
-
NISHIMURA Tetsuya
Central Research Laboratory, Mitsubishi Electric Corporation
-
YOSHIMURA Motomu
Central Research Laboratory, Mitsubishi Electric Corporation
-
Nishimura Tetsuya
Central Research Lab. Mitsubishi Electric Corp.
-
Yagyu Eiji
Central Research Laboratory Mitsubishi Electric Corporation
-
Yoshimura Motomu
Central Research Lab. Mitsubishi Electric Corp.
-
Niina T
Microelectronics Research Center Sanyo Electric Co. Ltd.
関連論文
- 364 nm Ar レーザを用いた近紫外ラマン分光の無機材料研究への応用
- High-Quality Organic 4-Dimethylamino-N-methyl-4-stilbazolium Tosylate (DAST) Crystals for THz Wave Generation
- 28p-A-7 Y_3TaO_7欠陥蛍石型酸化物の局所構造IV
- Y_3TaO_7欠陥蛍石型酸化物の局所構造III
- 31p-C-10 Y_3TaO_7欠陥蛍石型酸化物の局所構造II
- 29a-P-4 R_3TaO_7(R=Yb, Y)系欠陥蛍石型酸化物の局所構造
- Growth of Large GaN Single Crystals on High-Quality GaN Seed by Carbon-Added Na Flux Method
- Effect of RF Plasma Etching on Surface Damage in CsLiB_6O_ Crystal
- 熟硫酸中におけるアルミナセラミックスの腐食劣化挙動
- 窒化ケイ素セラミックスの溶液腐食試験(第3報) : 加熱硫酸中における腐食挙動と腐食層の組織
- 窒化ケイ素セラミックスの溶液腐食試験(第2報) : 煮沸硫酸中における重量減少と曲げ強さ
- 窒化ケイ素セラミックスの溶液腐食試験(第1報) : 試験方法と腐食液の種類の影響
- High-Quality Organic 4-Dimethylamino-N-Methyl-4-Stilbazolium Tosylate (DAST) Crystal for Electro-Optic Measurement(Special Issue on Recent Progress in Microwave and Millimeter-wave Photonics Technologies)
- Electro-Optic Measurement Using High-Quality : 4-dimethylamino-N-methyl-4-stilbazolium Tosylate (DAST) Crystal
- 錯体重合法によるHca_2Nb_3O_の光触媒特性
- YBa_Sr_xCu_3O_における酸素の無秩序化と電荷移動効果
- P-71 HIP法により作成した透明ハイドロキシアパタイト焼結体のキャラクタリゼイション
- 各種セラミックスの水溶液からのin situ低温作成
- BaTa_2O_6の紫外レーザーラマン分光法による1573Kまでのその場観察
- SrZrO_3の700から850℃における構造相転移のラマン分光による研究
- 顕微ラマン散乱による窒化アルミニウム半導体製造装置用部品の耐食性に関する研究
- 錯体重合法によるCa置換YBa_2Cu_3O_の合成とラマン散乱
- 錯体重合法による酸化物高温超伝導体の高純度合成
- ジルコニアの相変態 (特集 相変態現象)
- 錯体重合法により合成したCa-置換YBa_2Cu_3O_yの複素帯磁率
- Co置換YBa_2Cu_Co_xO_超伝導体のラマン散乱
- 錯体重合法によるPr-置換Y_2Ba_4Cu_7O_の複素帯磁率
- 錯体重合法による希土類と鉛で同時置換した変調構造のない(Bi, Pb)_2Sr_2(Ca, R)Cu_2O_(R:rare earth=Y)の合成
- 準安定HfO_2-YO_固溶体の格子定数と酸素の変位
- ジルコニアセラミックスの相転移と状態図
- ZrO_2-YO_
- Crack Propagation and Mechanical Fracture in GaAs-on-Si
- Effect of Employing Positions of Thermal Cyclic Annealing and Strained-Layer Superlattice on Defect Reduction in GaAs-on-Si
- GaAs(001) Epitaxial Layer on SOS Using a Specifically Designed MOCVD System
- Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of In_xGa_As-GaAs_yP_
- Lateral-Coupling-Induced Modification of Density of States and Exciton Dynamics in High-Density Ordered In_ Ga_ As/GaAs(311)B Quantum Dot Arrays(Optical Properties of Condensed Matter)
- Two-Dimensional In_Ga_As/GaAs Quantum Dot Superlattices Realized by Self-Organized Epitaxial Growth
- Scanning Tunneling Microscopy Observation of Ar-Ion-Bombarded Si(001) Surfaces and Regrowth Processes by Thermal Annealing
- アーク溶解により作製した希土類添加ジルコニアの正方⇄単斜相転移温度
- A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)
- A Monolithic GaAs Linear Power Amplifier Operating with a Single Low 2.7-V Supply for 1.9-GHz Digital Mobile Communication Applications
- Refractory WN_x/W Self-Aligned Gate GaAs Power Metal-Semiconductor Field-Effect Transistor for 1.9-GHz Digital Mobile Communication System Operating with a Single Low-Voltage Supply
- Effects of Oxygen Concentration and Annealing Sequence on Microstructure of Separation by Implanted Oxygen Wafer with High-Temperature Annealing
- 90°Phase-Matching Properties of YCa_4O(BO_3)_3 and Gd_x Y_Ca_4O(BO_3)_3
- Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
- Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications (Special Issue on Microwave and Millimeter Wave Technology)
- A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs (Special Issue on Low-Power and High-Speed LSI Technologies)
- A Buried-Channel WN_x/W Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for Single-Chip Front-End MMIC in Personal Handy Phone System
- Buried-Channel WN_x/W Self-Aligned GaAs MESFET Process with Selectively Implanted Channel and Undoped Epitaxial Surface Layers for MMIC Applications
- Investigation of the Gd Variation of Gd_xY_Ca_4O(BO_3)_3 Crystal and Its Application : Structure and Mechanical and Thermal Properties of Condensed Matter
- Photoinduced Damage in Gd_Y_xCa_4O(BO_3)_3 Crystals
- この人にきく
- ファインセラミックスの腐食と劣化 (最新腐食学--いま何が問題か!)
- Aluminum Chemical Vapor Deposition Technology for High Deposition Rate and Surface Morphology Improvement
- Crystallographic Structures and Parasitic Resistances of Self-Aligned Silicide TiSi_2/Self-Aligned Nitrided Barrier Layer/Selective Chemical Vapor Deposited Aluminum in Fully Self-Aligned Metallization Metal Oxide Semiconductor Field-Effect Transistor
- Two-Dimensional Hydrogen Analysis on Solid Surfaces by Time-of-Flight Electron-Stimulated Desorption Microscope
- Two-Dimensional Hydrogen Analysis of Hydrogen Storage Alloy Surface by Electron-Stimulated Desorption Microscopy
- Surface Analysis by Imaging of H^+ on Si Device Surface
- Two-Dimensional Hydrogen Analysis by Time-of-Flight-Type Electron-Stimulated Desorption Spectorscopy
- Nanometer-Scale Deposition of Ga on INF-Treated Si(111) Surfaces throughthe Decomposition of Triethylgallium by Scanning Tunneling Microscopy
- Fabrication of a-Plane GaN Substrate Using the Sr-Na Flux Liquid Phase Epitaxy Technique
- Synthesis of Bulk GaN Single Crystals Using Na-Ca Flux : Semiconductors
- Slope Nucleation Method for the Growth of High-Quality 4-Dimethylamino-Methyl-4-Stibazolim-Tosylate (DAST) Crystals
- セラミックスにおける準安定相の生成とその状態図 (セラミックス全展望--セラミックス・ジャパン′91を迎えて)
- Intermittent Automodulation Observed in Fe-3% Si Reeds
- Bulk Laser Damage in CsLiB_6O_ Crystal and Its Dependence on Crystal Structure
- 水熱法によるヒドロキシアパタイトホイスカ-の合成
- 水熱合成による水酸アパタイトウイスカ- (アパタイト材料の進歩)
- 錯体重合法によるペロブスカイト型複合酸化物の合成
- Scanning Capacitace Microscope/Atomic Force Microscope/Scanning Tunneling Microscope Study of Ion-Implanted Silicon Surfaces
- Adsorption and Desorption of AlCl_3 on Si(111)7×7 Observed by Scanning Tunneling Microscopy and Atomic Force Microscopy
- Surface Structure of TiO_2-Terminated SrTiO_3(001) Sudied by Medium Energy Ion Scattering and Ultraviolet Photoelectron Spectroscopy
- Kinetics and Depth Distributions of Oxygen Implanted into Si Analyzed by the Monte Carlo Simulation of Extended TRIM
- Mechanism of Temperature Dependence of Piezoelectric Properties for Pb(Zr,Ti)O_3
- Photochemical Hole Burning of Quinone Derivatives : Future Technology
- Photochemical Hole Burning of Quinone Derivatives
- Direct Writing of Silicon Lines by Pyrolytic Argon Laser CVD
- The Depth Profiling of the Crystal Quality in Laser-Annealed Polycrystalline Si Films by Raman Microprobe
- Raman Image Measurements of Laser-Recrystallized Polycrystalline Si Films by a Scanning Raman Microprobe
- Evaluation and Control of Grain Boundaries in Laser-Recrystallized Polysilicon Islands for Device Fabrication : A-6: SILICON CRYSTALS
- Dependence of SiC Blue Light-Emitting Diode Efficiency on the p-Type Layer Growth Temperature
- Growth of a Two-Inch GaN Single Crystal Substrate Using the Na Flux Method
- A Palm-Size Ultraviolet Laser Using a Combination of a Monolithic Wavelength Converter and an Optical Fiber
- Improvement in UV Optical Properties of CsLiB_6O_ by Reducing Water Molecules in the Crystal
- 355-nm UV Light Generation in High-Quality CsB_3O_5 Fabricated by Post-Growth Heat Treatment
- イットリウム系超伝導体における電荷移動効果とラマン散乱
- Influence of Crystallinity on the Bulk Laser-Induced Damage Threshold and Absorption of Laser Light in CsLiB_6O_ Crystals : Optics and Quantum Electronics
- Growth of KLN Fiber Crystals and Its Application for Blue-Violet Light Generation
- Control of Nucleation Site and Growth Orientation of Bulk GaN Crystals
- Na : A New Flux for Growing Hexagonal Boron Nitride Crystals at Low Temperature
- Novel Liquid Phase Epitaxy(LPE) Growth Method for Growing Large GaN Single Crystals: Introduction of the Flux Film Coated-Liquid Phase Epitaxy (FFC-LPE) Method
- Crystal Growth of Thermoelectric Material Na_xCoO_ by a Flux Method : Structure and Mechanical and Thermal Properties of Condensed Matter
- Growth of High-Quality CsLiB_6O_ Crystals from Materials Mixed in Aqueous Solution
- 2a-PS-50 錯体重合法によるSr置換YBa_2Cu_3O_yの超伝導特性
- 12p-PSB-33 錯体重合法によるCo置換YBa_2Cu_3O_yの交流磁場応答
- Generation of Tunable Near-UV Laser Radiation by Type-I Second-Harmonic Generation in a New Crystal, K2Al2B2O7 (KABO)
- New Practical Technique for Protein Crystallization with Floating and Stirring Methods
- Fabrication of GaAs/AlGaAs GRIN-SCH Lasers with Newly Developed Ridge Waveguide
- Fabrication of SiC Blue LEDs Using Off-Oriented Substrates
- Room Temperature Pulsed Oscillation of GaAlAs/GaAs Surface Emitting Junction Laser Grown by MBE