Control of Nucleation Site and Growth Orientation of Bulk GaN Crystals
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-10-01
著者
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YOSHIMURA Masashi
Department of Engineering, Osaka University
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MORI Yusuke
Department of Engineering, Osaka University
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SASAKI Takatomo
Department of Engineering, Osaka University
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YAP Yoke
Department of Electrical Engineering, Osaka University
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吉村 昌弘
東工大・工材研
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Mori Y
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Mori Yusuke
Department Of Electrical Engineering Osaka University
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Okamoto M
Osaka Univ. Osaka Jpn
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Sasaki T
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Yap Yoke
Department Of Electrical Engineering Osaka University
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Sasaki Takatomo
Department Of Electrical Engineering Faculty Of Engineering Osaka University:cooperative Research Ce
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Sasaki Takatomo
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Yoshimura Masashi
Department Of Applied Biological Chemistry The University Of Tokyo
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吉村 昌弘
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Yokota Y
The Research Center For Microanalysis Okayama University Of Science
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Okamoto M
Department Of Electrical Engineering Osaka University
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Yokota Y
Department Of Electrical Engineering Osaka University
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YANO Masaichi
Department of Electrical Engineering, Osaka University
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OKAMOTO Mitsuo
Department of Electrical Engineering, Osaka University
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Mori Yusuke
Department Of Applied Chemistry School Of Science And Engineering Waseda University
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Sugiyama Takayuki
Department Of Electrical Engineering And Computer Science Nagoya University
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Sasaki Takatomo
Department Of Electrical Engineering And Computer Science Nagoya University
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Mori Y
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
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Sasaki Takatomo
Department Of Electrical Electronic And Information Engineering Osaka University
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