A Monolithic GaAs Linear Power Amplifier Operating with a Single Low 2.7-V Supply for 1.9-GHz Digital Mobile Communication Applications
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概要
- 論文の詳細を見る
A monolithic linear power amplifier IC operating with a single low 2.7-V supply has been developed for 1.9-GHz digital mobile communication systems, such as the Japanese personal handy phone system (PHS). Refractory WN_x/W self-aligned gate GaAs power MESFETs have been successfully developed for L-band power amplification, and this power amplifier operates with high efficiency and low distortion at a low voltage of 2.7 V, without any additional negative voltage supply, by virtue of small drain knee voltage, high transconductance and sufficient breakdown voltage of the power MESFET. An output power of 23. 0 dBm and a high power-added efficiency of 30.8% were attained for 1.9-GHz π/4-shifted QPSK (quadrature phase shift keying) modulated input when adjacent channel leakage power level was less than -60 dBc at 600 kHz apart from 1.9 GHz.
- 社団法人電子情報通信学会の論文
- 1995-04-25
著者
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Takagi E
Toshiba Corp. Kawasaki‐shi Jpn
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Uchitomi N
Research And Development Center Toshiba Corp.
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Ishida Koichi
Optoelectronics Joint Research Laboratory:(present Address) Fundamental Research Laboratories Nec Co
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Takagi Eiji
Corporate Research & Development Center Toshiba Corporation
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Ishida K
Semiconductor System Engineering Center Toshiba Corporation
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Nagaoka Masami
Toshiba Research and Development Center
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Inoue Tomotoshi
Toshiba Research and Development Center
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Kawakyu Katsue
Toshiba Research and Development Center
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Obayashi Shuichi
Toshiba Research and Development Center
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Kayano Hiroyuki
Toshiba Research and Development Center
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Takagi Eiji
Toshiba Research and Development Center
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Tanabe Yoshikazu
Toshiba Research and Development Center
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Yoshimura Misao
Toshiba Research and Development Center
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Ishida Kenji
Toshiba Research and Development Center
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Kitaura Yoshiaki
Toshiba Research and Development Center
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Uchitomi Naotaka
Toshiba Research and Development Center
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Nagaoka M
Research And Development Center Toshiba Corp.
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Kitaura Y
Research And Development Center Toshiba Corp.
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Ishida K
Yamagata Univ. Yamagata Jpn
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Tanabe Y
Tokyo Inst. Of Technol. Yokohama‐shi
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Kawakyu Katsue
Toshiba Corp. Research And Development Center
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Kayano Hiroyuki
Toshiba Corporation
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吉村 昌弘
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Inoue T
Ntt Docomo Chugoku Hiroshima‐shi Jpn
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Tanabe Y
Hiroshima Univ. Higashihiroshima Jpn
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Tanabe Yoshikazu
Research And Development Center Toshiba Corp.
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Obayashi S
Corporate R&d Center Toshiba Corp.
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Obayashi Shuichi
Toshiba Corporation
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石田 謙司
神戸大学 大学院工学研究科
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