Gate Current Control Method by Pull-Down FET's for 0-28dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)

概要

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We have developed a GaAs direct-conversion π/4 shifted QPSK modulator IC equipped with variable attenuators for controlling the output power level of the 1.9GHz Personal Handy Phone system in Japan (PHS). The IC was successfully demonstrated showing state-of-the-art performance with the image rejection ratio of more than 36dBc at a low input power of -10dBm in 1.9GHz frequency range. By using the "Gate Current Control method by Pull-down FET's" (GCCPF), the equipped attenuators vary the output power from 0dB to -28dB by 4dB step. The IC operates at a 2.7V supply with power dissipation of 259mW. The 2.6×4.6mm^2 chip with about 400 elements was fabricated by a 0.5μm WNx-gate BPLDD GaAs MESFET process.
社団法人電子情報通信学会の論文
1997-06-25