A 1.5 GHz CMOS Low Noise Amplifier
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概要
- 論文の詳細を見る
A 1.5GHz low noise amplifier (LNA) was designed and fabricated by using CMOS technology. The measured associated gain (Ga) of the LNA is 13.8dB, the minimum noise figure (NFmin)is 2.9dB and the input-referred third-order intercept point (IIP3)is -2.5dBm at 1.5GHz. The LNA consumes 8.6mA from a 3.0V supply voltage. These measured results indicate a potential of short channel MOSFETs for high-frequency and low-noise applications.
- 社団法人電子情報通信学会の論文
- 1998-03-25
著者
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TSURUMI Hiroshi
Toshiba Corp.
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Fujimoto R
Toshiba Corp. Kawasaki‐shi Jpn
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Fujimoto Ryuichi
Toshiba Corp. Yokohama‐shi Jpn
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Tsurumi Hiroshi
Toshiba Corp. Kawasaki‐shi Jpn
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TANIMOTO Hiroshi
Research and Development Center, Toshiba Corporation
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OTAKA Shoji
Research and Development Center, TOSHIBA CORPORATION
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FUJIMOTO Ryuichi
Research and Development Center, Toshiba Corporation
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IWAI Hiroshi
Microelectronics Engineering Laboratory, Toshiba Corporation
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Tanimoto Hiroshi
The Corporate Research & Development Center Toshiba Corporation:(present Address) The Department
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Otaka S
Toshiba Corp. Kawasaki‐shi Jpn
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Otaka Shoji
Research And Development Center Toshiba Corporation
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Tanimoto H
Toshiba Corp. Kawasaki‐shi Jpn
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Tanimoto Hiroshi
Research And Development Center Toshiba Corporation
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Iwai Hiroshi
Microelectronics Engineering Laboratory Toshiba Corporation
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