Mobility Profiles in Self-Aligned WN_X Undoped AlGaAs/n-GaAs/Undoped AlGaAs Doped-Channel Hetero-MISFETs

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-01-15

著者

• Uchitomi Naotaka

  Ulsi Laboratories Toshiba Research And Development Center

• Nishihori Kazuya

  Ulsi Research Center Toshiba Corporation

• STEINER Klaus

  ULSI Research Center, Toshiba Corporation

• MIKAMI Hitoshi

  ULSI Research Center, Toshiba Corporation

• Steiner Klaus

  Ulsi Research Center Toshiba Corporation

• Mikami H

  Ulsi Research Center Toshiba Corporation

関連論文

• Damage Formed by Si^+ Implantation in GaAs
• Gate Current Control Method by Pull-Down FET's for 0-28dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)
• A Buried-Channel WN_x/W Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for Single-Chip Front-End MMIC in Personal Handy Phone System
• Buried-Channel WN_x/W Self-Aligned GaAs MESFET Process with Selectively Implanted Channel and Undoped Epitaxial Surface Layers for MMIC Applications
• Scatterings of Shallow Threshold Voltage on Si-Implanted WN Self-Alignment Gate GaAs Metal-Semiconductor Field-Effect Transistors on Different Composition 2-Inch Substrates by Growing in Three Kinds of Furnaces
• Mobility Profiles in Self-Aligned WN_X Undoped AlGaAs/n-GaAs/Undoped AlGaAs Doped-Channel Hetero-MISFETs
• Mobility Profiles in Submicron WN_x-BPLDD-GaAs MESFETs

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