Nishihori K | Toshiba Corp. Kawasaki‐shi Jpn

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概要

• NISHIHORI Kazuyaの詳細を見る
• 同名の論文著者
• Toshiba Corp. Kawasaki‐shi Jpnの論文著者

関連著者

• Uchitomi N

  Research And Development Center Toshiba Corp.

• Nishihori K

  Toshiba Corp. Kawasaki‐shi Jpn

• Kitaura Y

  Research And Development Center Toshiba Corp.

• MIHARA Masakatsu

  Research and Development Center, Toshiba Corp.

• HIROSE Mayumi

  Research and Development Center, Toshiba Corporation

• Tanabe Y

  Tokyo Inst. Of Technol. Yokohama‐shi

• 吉村 昌弘

  Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni

• Mihara Masakatsu

  Research And Development Center Toshiba Corp.

• Tanabe Y

  Hiroshima Univ. Higashihiroshima Jpn

• Tanabe Yoshikazu

  Research And Development Center Toshiba Corp.

• Hirose M

  Ntt Electronics Ebina‐shi Jpn

• Uchitomi Naotaka

  Ulsi Laboratories Toshiba Research And Development Center

• KITAURA Yoshiaki

  ULSI Laboratories, Toshiba Research and Development Center

• 亀山 敦

  神奈川大学工学部化学教室

• Nagaoka M

  Research And Development Center Toshiba Corp.

• Nishihori Kazuya

  Ulsi Research Center Toshiba Corporation

• Kitaura Yoshiaki

  Ulsi Laboratories Toshiba Research And Development Center

• HIROSE Mayumi

  ULSI Research Laboratories, TOSHIBA CORPORATION

• KAMEYAMA Atsushi

  Research and Development Center, TOSHIBA CORPORATION

• NAGAOKA Masami

  ULSI Research Laboratories, Toshiba Corporation

• TANABE Yoshikazu

  ULSI Research Laboratories, Toshiba Corporation

• MIHARA Masakatsu

  ULSI Research Laboratories, Toshiba Corporation

• YOSHIMURA Misao

  ULSI Research Laboratories, Toshiba Corporation

• Maeda Tadahiko

  Research Institute of Science and Technology for Society, Japan Science and Technology Agency

• 吉村 昌弘

  東工大・工材研

• Ikeda Y

  Mitsubishi Electric Corporation Information Technology R&d Center

• Ikeda Y

  Mitsubishi Electric Corp. Kamakura‐shi Jpn

• Maeda Tadahiko

  Research And Development Center Toshiba Corporation

• Uchitomi Naotaka

  Research And Development Center Toshiba Corporation

• Ishida Koichi

  Optoelectronics Joint Research Laboratory:(present Address) Fundamental Research Laboratories Nec Co

• Ishida K

  Semiconductor System Engineering Center Toshiba Corporation

• YOSHIMURA Misao

  Research and Development Center, TOSHIBA CORPORATION

• KITAURA Yoshiaki

  Research and Development Center, TOSHIBA CORPORATION

• Nagaoka Masami

  Toshiba Research and Development Center

• Tanabe Yoshikazu

  Toshiba Research and Development Center

• Yoshimura Misao

  Toshiba Research and Development Center

• Ishida Kenji

  Toshiba Research and Development Center

• Kitaura Yoshiaki

  Toshiba Research and Development Center

• Uchitomi Naotaka

  Toshiba Research and Development Center

• MATSUNAGA Tokuhiko

  Toshiba R & D Center

• NISHIHORI Kazuya

  Toshiba R & D Center

• HASHIMOTO Takashi

  Toshiba R & D Center

• MIHARA Masakatsu

  Toshiba R & D Center

• Tanabe Yoshikazu

  Research Institutefor Polymers And Textiles

• Yoshimura Misao

  Research And Development Center Toshiba Corp.

• NISHIHORI Kazuya

  Research and Development Center, Toshiba Corporation

• SASAKI Tadahiro

  ULSI Research Laboratories, TOSHIBA CORPORATION

• OTAKA Shoji

  Research and Development Center, TOSHIBA CORPORATION

• UMEDA Toshiyuki

  Research and Development Center, TOSHIBA CORPORATION

• KAMEYAMA Atsushi

  ULSI Research Laboratories, Toshiba Corporation

• IKEDA Yoshiko

  ULSI Research Laboratories, Toshiba Corporation

• Ishida K

  Yamagata Univ. Yamagata Jpn

• Otaka Shoji

  Research And Development Center Toshiba Corporation

• Sasaki Tadahiro

  Ulsi Research Laboratories Toshiba Corporation

• Umeda T

  Toshiba Corp. Kawasaki‐shi Jpn

• Kitaura Yoshiaki

  Research And Development Center Toshiba Corp.

• Nishihori Kazuya

  Research And Development Center Toshiba Corporation

• 石田 謙司

  神戸大学 大学院工学研究科

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著作論文

• Refractory WN_x/W Self-Aligned Gate GaAs Power Metal-Semiconductor Field-Effect Transistor for 1.9-GHz Digital Mobile Communication System Operating with a Single Low-Voltage Supply
• A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs (Special Issue on Low-Power and High-Speed LSI Technologies)
• Gate Current Control Method by Pull-Down FET's for 0-28dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)
• A Buried-Channel WN_x/W Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for Single-Chip Front-End MMIC in Personal Handy Phone System
• Buried-Channel WN_x/W Self-Aligned GaAs MESFET Process with Selectively Implanted Channel and Undoped Epitaxial Surface Layers for MMIC Applications

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