Yoshimura Misao | Research And Development Center Toshiba Corp.

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著作論文

364 nm Ar レーザを用いた近紫外ラマン分光の無機材料研究への応用
High-Quality Organic 4-Dimethylamino-N-methyl-4-stilbazolium Tosylate (DAST) Crystals for THz Wave Generation
Growth of Large GaN Single Crystals on High-Quality GaN Seed by Carbon-Added Na Flux Method
High-Quality Organic 4-Dimethylamino-N-Methyl-4-Stilbazolium Tosylate (DAST) Crystal for Electro-Optic Measurement(Special Issue on Recent Progress in Microwave and Millimeter-wave Photonics Technologies)
Electro-Optic Measurement Using High-Quality : 4-dimethylamino-N-methyl-4-stilbazolium Tosylate (DAST) Crystal
錯体重合法によるHca_2Nb_3O_の光触媒特性
BaTa_2O_6の紫外レーザーラマン分光法による1573Kまでのその場観察
SrZrO_3の700から850℃における構造相転移のラマン分光による研究
顕微ラマン散乱による窒化アルミニウム半導体製造装置用部品の耐食性に関する研究
A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)
90°Phase-Matching Properties of YCa_4O(BO_3)_3 and Gd_x Y_Ca_4O(BO_3)_3
Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications (Special Issue on Microwave and Millimeter Wave Technology)
A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs (Special Issue on Low-Power and High-Speed LSI Technologies)
Investigation of the Gd Variation of Gd_xY_Ca_4O(BO_3)_3 Crystal and Its Application : Structure and Mechanical and Thermal Properties of Condensed Matter
Photoinduced Damage in Gd_Y_xCa_4O(BO_3)_3 Crystals
Two-Dimensional Hydrogen Analysis on Solid Surfaces by Time-of-Flight Electron-Stimulated Desorption Microscope
Two-Dimensional Hydrogen Analysis of Hydrogen Storage Alloy Surface by Electron-Stimulated Desorption Microscopy
Fabrication of a-Plane GaN Substrate Using the Sr-Na Flux Liquid Phase Epitaxy Technique
Synthesis of Bulk GaN Single Crystals Using Na-Ca Flux : Semiconductors
Slope Nucleation Method for the Growth of High-Quality 4-Dimethylamino-Methyl-4-Stibazolim-Tosylate (DAST) Crystals
Growth of a Two-Inch GaN Single Crystal Substrate Using the Na Flux Method
A Palm-Size Ultraviolet Laser Using a Combination of a Monolithic Wavelength Converter and an Optical Fiber
Improvement in UV Optical Properties of CsLiB_6O_ by Reducing Water Molecules in the Crystal
355-nm UV Light Generation in High-Quality CsB_3O_5 Fabricated by Post-Growth Heat Treatment
Influence of Crystallinity on the Bulk Laser-Induced Damage Threshold and Absorption of Laser Light in CsLiB_6O_ Crystals : Optics and Quantum Electronics
Novel Liquid Phase Epitaxy(LPE) Growth Method for Growing Large GaN Single Crystals: Introduction of the Flux Film Coated-Liquid Phase Epitaxy (FFC-LPE) Method
Crystal Growth of Thermoelectric Material Na_xCoO_ by a Flux Method : Structure and Mechanical and Thermal Properties of Condensed Matter
Growth of High-Quality CsLiB_6O_ Crystals from Materials Mixed in Aqueous Solution
Generation of Tunable Near-UV Laser Radiation by Type-I Second-Harmonic Generation in a New Crystal, K2Al2B2O7 (KABO)
New Practical Technique for Protein Crystallization with Floating and Stirring Methods
Temperature-Insensitive Second-Harmonic Generation at 0.5321 μm in YCa4O(BO3)3
The Growth of K_2Al_2B_2O_7 (KAB) Crystal by Modified Middle Seeded Solution Growth (MSSG) Method : Structure and Mechanical and Thermal Properties of Condensed Matter
Growth of Protein Crystal at Interface between Two Liquids Using Slow Cooling Method : Structure and Mechanical and Thermal Properties of Condensed Matter
Growth of Prismatic GaN Single Crystals with High Transparency on Small GaN Seed Crystals by Ca-Li-Added Na Flux Method
A Self-Aligned Gate AlGaAs/GaAs Heterostructure Field-Effect Transistor with an Ion-Implanted Buried-Channel for use in High Efficiency Power Amplifiers

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