Sasaki Tatsuya | Opto And Wireless Deivce Res. Labs. Nec Corporation

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概要

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著作論文

Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications (Special Issue on Microwave and Millimeter Wave Technology)
Single Low 2.4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1.9-GHz PHS Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
Hybrid-Integrated Symmetric Mach-Zehnder All-Optical Switches and Ultrafast Signal Processing(Ultrafast Photonics)
Control Scheme for Optimizing the Interferometer Phase Bias in the Symmetric-Mach-Zehnder All-Optical Switch(Joint Special Issue on Recent Progress in Optoelectronics and Communications)(OECC Awarded)
Control Scheme for Optimizing the Interferometer Phase Bias in the Symmetric-Mach-Zehnder All-Optical Switch (IEICE Trans., Electron., Vol. E86-C, No. 5, Joint Special Issue on Recent Progress in Optoelectronics and Communications)
Hybrid Integrated 8-Channel SOAG Receptacle Module with Driver Circuits
Ultrafast Hybrid-Integrated Symmetric Mach-Zehnder All-Optical Switch and Its 168Gbps Error-Free Demultiplexing Operation(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
Spot-Size-Converter Integrated Semiconductor Optical Amplifiers for Optical Switching Systems (Joint Special Issue on Photonics in Switching : Systems and Devices)
Hybrid Integrated 4×4 Optical Matrix Switch Module on Silica Based Planar Waveguide Platform (Joint Special Issue on Photonics in Switching : Systems and Devices)
Spot-Size-Converter Integrated Semiconductor Optical Amplifiers for Optical Switching Systems (Joint Special Issue on Photonics in Switching : Systems and Devices)
Hybrid Integrated 4×4 Optical Matrix Switch Module on Silica Based Planar Waveguide Platform (Joint Special Issue on Photonics in Switching : Systems and Devices)
Photonic Integrated Circuits Fabricated by Bandgap-Energy-Controlled Selective MOVPE Technique
Improved High-Temperature and High-Power Characteristics of 1.3-μm Spot-Size Converter Integrated All-Selective Metalorganic Vapor Phase Epitaxy Grown Planar Buried Heterostructure Laser Diodes by Newly Introduced Multiple-Stripe Recombination Layers
A 24 cm Diagonal TFT-LCD Fabricated Using a Simplified, Four-Photolithographic Mask Process (Special Issue on Liquid-Crystal Displays)
Wide-Wavelength-Range Modulator-Integrated DFB Laser Diodes Fabricated on a Single Wafer(Special Issue on High-Capacity WDM/TDM Networks)

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