Sasaki Yoshihiro | The Authors Are With Ulsi Device Development Laboratory Nec Corporation
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概要
関連著者
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Sasaki Yasuhiro
Material Development Center Nec Corporation
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Sasaki Yoshihiro
The Authors Are With Ulsi Device Development Laboratory Nec Corporation
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Sakata Y
Nec Kansai Ltd. Shiga Jpn
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ITOH Kazuo
Department of Clinical Cariology, Showa University School of Dentistry
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Itoh K
Department Of Clinical Cariology Showa University School Of Dentistry
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Inoue T
Kumamoto University
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Ohnishi Osamu
Material Development Center, NEC Corporation
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SUZUKI TATSUYA
Graduate School of Engineering, Nagoya University
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Inoue T
Faculty Of Engineering Kumamoto University
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Inoue Takahiro
Dep. Of Computer Sci. And Electrical Engineering Graduate School Of Sci. And Technol. Kumamoto Univ.
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Furushima Yuji
The Authors Are With Ulsi Device Development Laboratory Nec Corporation
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Kobayashi Haruo
Department Of Electronic Engineering Faculty Of Engineering Gunma University
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Kobayashi Haruo
Sanyo Lsi Design-system Soft Co. Ltd.
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Suzuki Tatsuya
Department Of Electronic-mechanical Engineering Graduate School Of Engineering Nagoya University
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Suzuki Tatsuya
Department Of Mechanical Science And Engineering Graduate School Of Engineering Nagoya University
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Suzuki T
Shizuoka Univ. Hamamatsu‐shi Jpn
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Ohnishi O
Material Development Center Nec Corporation
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OKUNUKI Yuichiro
The authors are with ULSI Device Development Laboratory, NEC Corporation
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MYONO Takao
MOS-LSI Division, Semiconductor company, SANYO Electric Co., Ltd.
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NISHIBE Eiji
MOS-LSI Division, Semiconductor company, SANYO Electric Co., Ltd.
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KIKUCHI Shuichi
MOS-LSI Division, Semiconductor company, SANYO Electric Co., Ltd.
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IWATSU Katsuhiko
MOS-LSI Division, Semiconductor company, SANYO Electric Co., Ltd.
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SUZUKI Takuya
MOS-LSI Division, Semiconductor company, SANYO Electric Co., Ltd.
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Myono Takao
Semiconductor Company Sanyo Electric Co. Ltd.
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Nishibe Eiji
System Lsi Division Semiconductor Company Sanyo Electric Co. Ltd.
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Kikuchi S
Iwate Univ. Morioka‐shi Jpn
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Kobayashi H
The Department Of Electronic Engineering Faculty Of Engineering Gunma University
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Kobayashi H
Sanyo Lsi Design-system Soft Co. Ltd.
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Yamazaki H
The Authors Are With The Faculty Of Engineering Tokyo Institute Of Technology
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Inoue T
Graduate School Of Science And Technology Kumamoto University
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Zaitsu Toshiyuki
3rd Development Department Transmission Device Division Transmission Operations Unit Nec Corporation
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Okunuki Yuichiro
The Authors Are With Ulsi Device Development Laboratory Nec Corporation
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Myono Takao
Semiconductor Company Sanyo Electric Co. Ltd
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KOBAYASHI Haruo
Department of Electronic Engineering, Graduate School of Engineering, Gunma University
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Sasaki Tatsuya
Opto And Wireless Deivce Res. Labs. Nec Corporation
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ITOH Kazuo
The Department of Operative Dentistry, Showa University School of Dentistry
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Kudo K
Chiba Univ. Chiba Jpn
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Zaitsu Toshiyuki
Second Transmission Division, NEC Corporation
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Kishie Hiromi
Material Development Center, NEC Corporation
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Inoue Takeshi
Material Development Center, NEC Corporation
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Zaitsu Toshiyuki
the Transmission Devices Development Department, 2nd Transmission Division, NEC Corporation
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Inoue Takeshi
the Material Development Center, NEC Corporation
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Ohnishi Osamu
the Material Development Center, NEC Corporation
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Sasaki Yasuhiro
the Material Development Center, NEC Corporation
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SASAKI Yoshisato
Department of Electronics,Faculty of Technology,Gunma University
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Kishie Hiromi
Material Development Center Nec Corporation
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Kobayashi Haruo
The Department Of Electronic Engineering Faculty Of Engineering Gunma University
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SASAKI Tatsuya
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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Komatsu K
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Komatsu Keiro
The Authors Are With Ulsi Device Development Laboratory Nec Corporation
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Ohnishi Osamu
Material Development Center Nec Corporation
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YAMAZAKI Hiroyuki
The author is with Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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SAKATA Yasutaka
The authors are with ULSI Device Development Laboratory, NEC Corporation
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SASAKI Yoshisato
the Department of Electronic Engineering, Faculty of Engineering, Gunma University
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FURUSHIMA Yuji
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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YAMAZAKI Hiroyuki
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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KUDO Koji
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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SAKATA Yasutaka
ULSI Device Development Laboratories, NEC Corporation
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OKUNUKI Yuichiro
ULSI Device Development Laboratories, NEC Corporation
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SASAKI Yoshihiro
ULSI Device Development Laboratories, NEC Corporation
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Kobayashi Haruo
The Department Of Electrical Engineering Tokyo Metropolitan College Of Technology
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Sakata Yasutaka
Ulsi Device Development Laboratories Nec Corporation
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Sasaki T
Opto And Wireless Deivce Res. Labs. Nec Corporation
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Sasaki Yoshisato
Department Of Electronics Faculty Of Technology Gunma University
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Zaitsu Toshiyuki
Second Transmission Division Nec Corporation
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Itoh Kazuo
Department Of Cardiovascular Surgery Aomori General Hospital
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Inoue Takeshi
Material Development Center Nec Corporation
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Sasaki Tatsuya
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Inoue Takeshi
The Material Development Center Nec Corporation
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KOBAYASHI HARUO
Department of Animal Breeding, Faculty of Agriculture, University of Tokyo
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Sasaki Yoshisato
Department of Electronic Engineering, Gunma University, Kirya, Gunma 376
著作論文
- Piezoelectric Ceramic Transformer for Power Supply Operating in Thickness Extensional Vibration Mode
- 2 MHz Power Converter with Piezoelectric Ceramic Transformer
- Spot-Size-Converter Integrated Laser Diode with Waveguide Width Abruptly Expanded Structure(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- Modeling and Parameter Extraction Technique for Uni-Directional HV MOS Devices (Special Section of Selected Papers from the 12th Workshop on Circuit and Systems in Karuizawa)
- High-Voltage MOS Device Modeling with BSIM3v3 SPICE Model (Special Issue on Microelectronic Test Structures)
- Improved High-Temperature and High-Power Characteristics of 1.3-μm Spot-Size Converter Integrated All-Selective Metalorganic Vapor Phase Epitaxy Grown Planar Buried Heterostructure Laser Diodes by Newly Introduced Multiple-Stripe Recombination Layers