Spot-Size-Converter Integrated Laser Diode with Waveguide Width Abruptly Expanded Structure(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
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概要
- 論文の詳細を見る
We propose a device called the Waveguide width abruptly EXpanded Spot-Size-Converter integrated Laser Diode(WEX-SSC-LD) that has been designed to improve lasing characteristics by achieving a steep photoluminescence wavelength change along the cavity. The waveguide parameter was optimized by a three-dimensional beam propagation method to reduce mode conversion and absorption losses. The WEX-SSC-LD's showed superior lasing characteristics such as threshold currents of 5.8 mA at 25℃ and 19 mA at 85℃ and operation current of 57.5 mA at an output power of 10 mW for 85℃. These excellent lasing characteristics were achieved due to the steeper bandgap-energy shift in the SSC section near the LD section side by introducing the WEX-SSC structure as well as the high-quality MQW active layer grown by selective MOVPE and the precisely controlled pn-pn current blocking structure. The coupling loss to normal single-mode fiber was as low as 1.8 dB while maintaining a large coupling tolerance of ±1.8μm. These excellent coupling characteristics are very promising for passively aligned optical modules.
- 社団法人電子情報通信学会の論文
- 2000-06-25
著者
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Sasaki Yasuhiro
Material Development Center Nec Corporation
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Furushima Yuji
The Authors Are With Ulsi Device Development Laboratory Nec Corporation
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Sasaki Yoshihiro
The Authors Are With Ulsi Device Development Laboratory Nec Corporation
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Komatsu Keiro
The Authors Are With Ulsi Device Development Laboratory Nec Corporation
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YAMAZAKI Hiroyuki
The author is with Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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SAKATA Yasutaka
The authors are with ULSI Device Development Laboratory, NEC Corporation
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OKUNUKI Yuichiro
The authors are with ULSI Device Development Laboratory, NEC Corporation
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Sakata Y
Nec Kansai Ltd. Shiga Jpn
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Yamazaki H
The Authors Are With The Faculty Of Engineering Tokyo Institute Of Technology
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Okunuki Yuichiro
The Authors Are With Ulsi Device Development Laboratory Nec Corporation
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