Modeling and Parameter Extraction Technique for Uni-Directional HV MOS Devices (Special Section of Selected Papers from the 12th Workshop on Circuit and Systems in Karuizawa)
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概要
- 論文の詳細を見る
This paper presents a new technique for accurately modeling uni-directional High-Voltage lightly-doped-drainMOS (HV MOS) devices by extending the bi-directional HV MOS model and adopting a new parameter extraction method. We have already reported on a SPICE model for bi-directional HV MOS devices based on BSIM3v3. However, if we apply this bi-directional HV MOS model and its parameter extraction technique directly to uni-directional HV MOS devices, there are large discrepancies between the measured and simulated I-V characteristics of the uni-directional devices. This paper extends the bi-directional HV MOS model, and adopts a new parameter extraction technique. Using parameters extracted with the new method, the simulated I-V characteristics of the unidirectional n-channel HV MOS device match the measured results well. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs.
- 社団法人電子情報通信学会の論文
- 2000-03-25
著者
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ITOH Kazuo
Department of Clinical Cariology, Showa University School of Dentistry
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Itoh K
Department Of Clinical Cariology Showa University School Of Dentistry
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ITOH Kazuo
The Department of Operative Dentistry, Showa University School of Dentistry
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Sasaki Yasuhiro
Material Development Center Nec Corporation
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SUZUKI TATSUYA
Graduate School of Engineering, Nagoya University
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Kobayashi Haruo
Department Of Electronic Engineering Faculty Of Engineering Gunma University
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Kobayashi Haruo
The Department Of Electronic Engineering Faculty Of Engineering Gunma University
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Kobayashi Haruo
Sanyo Lsi Design-system Soft Co. Ltd.
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Sasaki Yoshihiro
The Authors Are With Ulsi Device Development Laboratory Nec Corporation
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Suzuki Tatsuya
Department Of Electronic-mechanical Engineering Graduate School Of Engineering Nagoya University
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Suzuki Tatsuya
Department Of Mechanical Science And Engineering Graduate School Of Engineering Nagoya University
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Suzuki T
Shizuoka Univ. Hamamatsu‐shi Jpn
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MYONO Takao
MOS-LSI Division, Semiconductor company, SANYO Electric Co., Ltd.
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NISHIBE Eiji
MOS-LSI Division, Semiconductor company, SANYO Electric Co., Ltd.
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KIKUCHI Shuichi
MOS-LSI Division, Semiconductor company, SANYO Electric Co., Ltd.
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IWATSU Katsuhiko
MOS-LSI Division, Semiconductor company, SANYO Electric Co., Ltd.
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SUZUKI Takuya
MOS-LSI Division, Semiconductor company, SANYO Electric Co., Ltd.
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SASAKI Yoshisato
the Department of Electronic Engineering, Faculty of Engineering, Gunma University
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Myono Takao
Semiconductor Company Sanyo Electric Co. Ltd.
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Nishibe Eiji
System Lsi Division Semiconductor Company Sanyo Electric Co. Ltd.
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Kikuchi S
Iwate Univ. Morioka‐shi Jpn
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Kobayashi H
The Department Of Electronic Engineering Faculty Of Engineering Gunma University
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Kobayashi H
Sanyo Lsi Design-system Soft Co. Ltd.
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Kobayashi Haruo
The Department Of Electrical Engineering Tokyo Metropolitan College Of Technology
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Sakata Y
Nec Kansai Ltd. Shiga Jpn
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Myono Takao
Semiconductor Company Sanyo Electric Co. Ltd
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