High-Voltage MOS Device Modeling with BSIM3v3 SPICE Model (Special Issue on Microelectronic Test Structures)
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概要
- 論文の詳細を見る
This paper presents a new technique for modeling High-Voltage lightly-doped-drain MOS (HV MOS) devices accurately with the BSIM3v3 SPICE model. Standard SPICE models do not model the voltage dependency of R_s and R_d in HV MOS devices; this causes large discrepancies between the simulated and measured I-V characteristics of HV MOS devices. We propose to assign physical meanings and values different from the original BSIM3v3 model to three of its parameters to represent the voltage dependency of R_s and R_d. With this method, we have succeeded in highly accurate parameter extraction, and the simulated I-V characteristics of HV MOS devices using the extracted parameters match the measured results well. The relationship between the proposed modeling technique and the physical mechanism of HV MOS devices is also discussed based on measurement and device simulation results. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs, so we can use SPICE simulation for accurate circuit design of complex circuits using HV MOS devices.
- 社団法人電子情報通信学会の論文
- 1999-04-25
著者
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ITOH Kazuo
Department of Clinical Cariology, Showa University School of Dentistry
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KOBAYASHI Haruo
Department of Electronic Engineering, Graduate School of Engineering, Gunma University
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Itoh K
Department Of Clinical Cariology Showa University School Of Dentistry
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Sasaki Yasuhiro
Material Development Center Nec Corporation
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SUZUKI TATSUYA
Graduate School of Engineering, Nagoya University
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SASAKI Yoshisato
Department of Electronics,Faculty of Technology,Gunma University
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Kobayashi Haruo
Department Of Electronic Engineering Faculty Of Engineering Gunma University
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Kobayashi Haruo
Sanyo Lsi Design-system Soft Co. Ltd.
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Sasaki Yoshihiro
The Authors Are With Ulsi Device Development Laboratory Nec Corporation
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Suzuki Tatsuya
Department Of Electronic-mechanical Engineering Graduate School Of Engineering Nagoya University
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Suzuki Tatsuya
Department Of Mechanical Science And Engineering Graduate School Of Engineering Nagoya University
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Suzuki T
Shizuoka Univ. Hamamatsu‐shi Jpn
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MYONO Takao
MOS-LSI Division, Semiconductor company, SANYO Electric Co., Ltd.
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NISHIBE Eiji
MOS-LSI Division, Semiconductor company, SANYO Electric Co., Ltd.
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KIKUCHI Shuichi
MOS-LSI Division, Semiconductor company, SANYO Electric Co., Ltd.
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IWATSU Katsuhiko
MOS-LSI Division, Semiconductor company, SANYO Electric Co., Ltd.
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SUZUKI Takuya
MOS-LSI Division, Semiconductor company, SANYO Electric Co., Ltd.
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Myono Takao
Semiconductor Company Sanyo Electric Co. Ltd.
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Nishibe Eiji
System Lsi Division Semiconductor Company Sanyo Electric Co. Ltd.
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Kikuchi S
Iwate Univ. Morioka‐shi Jpn
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Kobayashi H
The Department Of Electronic Engineering Faculty Of Engineering Gunma University
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Kobayashi H
Sanyo Lsi Design-system Soft Co. Ltd.
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Sakata Y
Nec Kansai Ltd. Shiga Jpn
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Sasaki Yoshisato
Department Of Electronics Faculty Of Technology Gunma University
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Itoh Kazuo
Department Of Cardiovascular Surgery Aomori General Hospital
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Myono Takao
Semiconductor Company Sanyo Electric Co. Ltd
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KOBAYASHI HARUO
Department of Animal Breeding, Faculty of Agriculture, University of Tokyo
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Sasaki Yoshisato
Department of Electronic Engineering, Gunma University, Kirya, Gunma 376
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