Improved High-Temperature and High-Power Characteristics of 1.3-μm Spot-Size Converter Integrated All-Selective Metalorganic Vapor Phase Epitaxy Grown Planar Buried Heterostructure Laser Diodes by Newly Introduced Multiple-Stripe Recombination Layers

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-02-28

著者

• Sasaki Tatsuya

  Opto And Wireless Deivce Res. Labs. Nec Corporation

• Kudo K

  Chiba Univ. Chiba Jpn

• Sasaki Yasuhiro

  Material Development Center Nec Corporation

• Furushima Yuji

  The Authors Are With Ulsi Device Development Laboratory Nec Corporation

• SASAKI Tatsuya

  Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation

• Sasaki Yoshihiro

  The Authors Are With Ulsi Device Development Laboratory Nec Corporation

• Komatsu K

  Institute Of Multidisciplinary Research For Advanced Materials Tohoku University

• OKUNUKI Yuichiro

  The authors are with ULSI Device Development Laboratory, NEC Corporation

• FURUSHIMA Yuji

  Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation

• YAMAZAKI Hiroyuki

  Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation

• KUDO Koji

  Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation

• SAKATA Yasutaka

  ULSI Device Development Laboratories, NEC Corporation

• OKUNUKI Yuichiro

  ULSI Device Development Laboratories, NEC Corporation

• SASAKI Yoshihiro

  ULSI Device Development Laboratories, NEC Corporation

• Sakata Y

  Nec Kansai Ltd. Shiga Jpn

• Sakata Yasutaka

  Ulsi Device Development Laboratories Nec Corporation

• Sasaki T

  Opto And Wireless Deivce Res. Labs. Nec Corporation

• Yamazaki H

  The Authors Are With The Faculty Of Engineering Tokyo Institute Of Technology

• Okunuki Yuichiro

  The Authors Are With Ulsi Device Development Laboratory Nec Corporation

• Sasaki Tatsuya

  Optoelectronics And High Frequency Device Research Laboratories Nec Corporation

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