Investigation of organic static induction transistor gate electrodes (有機エレクトロニクス)

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概要

• 論文の詳細を見る

• Organic Static Induction transistors (OSITs) are remarkable for relatively low operating voltage and high operating speed, which can be mainly attributed to their short vertical channels. While the interface between the source electrode and the organic semiconductor plays an important role in the injection of carriers, the structure of the gate electrode is another key factor to the characteristics of an OSIT. In this research, we focused on reducing the gate leakage current to improve the characteristics of an OSIT with a slit-type gate electrode. The experimental results show that by appending insulating layers around the gate electrode, the gate leakage current could be effectively reduced and thus the device performance gets improved.

• 社団法人電子情報通信学会の論文
• 2008-12-04

著者

• PU Fanghua

  Chiba University

• KUDO Kazuhiro

  Chiba University

• Pu Fanghua

  Graduate School Of Engineering Chiba University

• Kudo K

  Chiba Univ. Chiba Jpn

• Kudo Kazuhiro

  Department Of Electronic And Mechanical Engineering Faculty Chiba University

• Kudo Kazuhiro

  Chiba Univ. Chiba Jpn

• Kudo Kazuhiro

  Oitda Advanced Organic Device Project Chiba Laboratory

• Kudo Kazuhiro

  Department Of Electronics And Mechanical Engineering Faculty Of Engineering Chiba University

• KUDO Kazuhiro

  Graduate School of Engineering, Chiba University

• YAMAUCHI Hiroshi

  Faculty of Engineering, Chiba University

• Kikuchi Koudai

  Faculty of Engineering, Chiba University

• Watanabe Yasuyuki

  Center for Frontier Science, Chiba University

• Kikuchi Koudai

  Faculty Of Engineering Chiba University

• Yamauchi Hiroshi

  Graduate School Of Engineering Chiba University

• Watanabe Yasuyuki

  Center For Frontier Science Chiba University

• Kudo Kazuhiro

  Graduate School Of Engineering Chiba University

• Yamauchi Hiroshi

  Faculty Of Engineering Ehime University

• Kudo Kazuhiro

  Chiba University Faculty Of Engineering

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