Wide-Wavelength-Range Modulator-Integrated DFB Laser Diodes Fabricated on a Single Wafer(Special Issue on High-Capacity WDM/TDM Networks)

概要

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Different-wavelength distributed feedback laser diodes with integrated modulators(DFB/MODs) are fabricated on a single wafer operate at wavelengths from 1.52 μm to 1.59 μm, a range comparable to the expanded Er-doped fiber amplifier gain band. A newly developed field-size-variation electron-beam lithography enables grating pitch to be controlled to within 0.0012 nm, and narrow-stripe selective metal-organic vapor-phase epitaxy is used to control the bandgap wavelength of laser active layers and modulator absorption layers for each channel. The channel spacing of fabricated 40-channel DFB/MODs is 214 GHz in average with a standard deviation of 0.39 nm. Very uniform lasing and modulating performances are achieved, such as threshold currents about 10 mA and extinction rations about 20 dB at -2 V in average. These devices have been used to demonstrate 2.5-Gb/s transmission over 600 km of a normal fiber with a power penalty of less than 1 dB.
社団法人電子情報通信学会の論文
1998-08-25