Spot-Size-Converter Integrated Semiconductor Optical Amplifiers for Optical Switching Systems (Joint Special Issue on Photonics in Switching : Systems and Devices)
スポンサーリンク
概要
- 論文の詳細を見る
Spot-size-converter integrated semiconductor optical amplifiers have been developed as gate elements for optical switch matrices. An S-shape waveguide has been introduced to prevent re-coupling of unguided light to the output fiber. An angled-facet structure effectively suppressed light reflection at the and facets. Consequently, a high extinction ratio of 70 dB and a high fiber-to-fiber gain of 20 dB were achieved. Sufficient optical coupling characteristics to a flat-ended single-mode fiber with a coupling loss of 3.5 dB were also demonstrated.
- 社団法人電子情報通信学会の論文
- 1999-02-25
著者
-
Sasaki Tatsuya
Opto And Wireless Deivce Res. Labs. Nec Corporation
-
TAMANUKI Takemasa
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
-
KITAMURA Shotaro
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
-
HATAKEYAMA Hiroshi
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
-
SASAKI Tatsuya
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
-
YAMAGUCHI Masayuki
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
-
KITAMURA Shotaro
Compound Semiconductor Device Division, NEC Corporation
-
Yamaguchi M
Kure National Coll. Of Technol. Kure‐shi Jpn
-
Sasaki T
Opto And Wireless Deivce Res. Labs. Nec Corporation
-
Hatakeyama Hiroshi
The Authors Are With Optoelectronics & High Frequency Device Research Laboratories Nec Corporati
-
Tamanuki Takemasa
Networking Research Laboratories Nec Corporation:(present Address)interintelligence Inc.
-
Yamaguchi Masayuki
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
-
Kitamura Shotaro
Compound Semiconductor Device Division Nec Corporation
-
Sasaki Tatsuya
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
関連論文
- Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications (Special Issue on Microwave and Millimeter Wave Technology)
- Single Low 2.4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1.9-GHz PHS Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
- Hybrid-Integrated Symmetric Mach-Zehnder All-Optical Switches and Ultrafast Signal Processing(Ultrafast Photonics)
- Control Scheme for Optimizing the Interferometer Phase Bias in the Symmetric-Mach-Zehnder All-Optical Switch(Joint Special Issue on Recent Progress in Optoelectronics and Communications)(OECC Awarded)
- Control Scheme for Optimizing the Interferometer Phase Bias in the Symmetric-Mach-Zehnder All-Optical Switch (IEICE Trans., Electron., Vol. E86-C, No. 5, Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Hybrid Integrated 8-Channel SOAG Receptacle Module with Driver Circuits
- Ultrafast Hybrid-Integrated Symmetric Mach-Zehnder All-Optical Switch and Its 168Gbps Error-Free Demultiplexing Operation(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- Spot-Size-Converter Integrated Semiconductor Optical Amplifiers for Optical Switching Systems (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Hybrid Integrated 4×4 Optical Matrix Switch Module on Silica Based Planar Waveguide Platform (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Spot-Size-Converter Integrated Semiconductor Optical Amplifiers for Optical Switching Systems (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Hybrid Integrated 4×4 Optical Matrix Switch Module on Silica Based Planar Waveguide Platform (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Photonic Integrated Circuits Fabricated by Bandgap-Energy-Controlled Selective MOVPE Technique
- A High-Performance Switch Architecture for Free-Space Photonic Switching Systems (Joint Special Issue on Photonics in Switching : Systems and Devices)
- A High-Performance Switch Architecture for Free-Space Photonic Switching Systems (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Improved High-Temperature and High-Power Characteristics of 1.3-μm Spot-Size Converter Integrated All-Selective Metalorganic Vapor Phase Epitaxy Grown Planar Buried Heterostructure Laser Diodes by Newly Introduced Multiple-Stripe Recombination Layers
- A 24 cm Diagonal TFT-LCD Fabricated Using a Simplified, Four-Photolithographic Mask Process (Special Issue on Liquid-Crystal Displays)
- NRD Guide Integrated Circuit-Compatible Folded Planar Antenna Fed by High Permittivity LSE-NRD Guide Radiator at 60 GHz(Antennas, Circuits and Receivers)(Wave Technologies for Wireless and Optical Communications)
- High Permittivity LSE-NRD Guide and Its Application to a New Type of Millimeter Wave Antenna
- Hyper-Media Photonic Information Networks as Future Network Service Platforms (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Hyper-Media Photonic Information Networks as Future Network Service Platforms (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Basic Properties of Magnetostrictive Actuators Using Tb-Fe and Sm-Fe Thin Films (Special Issue on Micromachine Technology)
- Analog Free-Space Optical Switch Structure Based on Cascaded Beam Shifters (Special Issue on Photonic Switching Technologies)
- Transverse-Mode Characteristics of InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers Considering Gain Offset
- Wide-Wavelength-Range Modulator-Integrated DFB Laser Diodes Fabricated on a Single Wafer(Special Issue on High-Capacity WDM/TDM Networks)
- A Binding Algorithm for Retargetable Compilation to Non-orthogonal DSP Architectures (Special Section on VLSI Design and CAD Algorithms)
- Architecture Evaluation Based on the Datapath Structure and Parallel Constraint (Special Section on VLSI Design and CAD Algorithms)
- Spray Selective Etch Process for Short-Cavity Fabrication of GaAs/GaAlAs Surface Emitting Laser
- Interface Recombination Reduction by (NH_4)_2S_x-Passivation in Metalorganic Chemical Vapor Deposition Regrown GaAlAs/GaAs Buried Heterostructure Lasers and Estimation of Threshold Currents in Microeavity Surface Emitting Lasers
- Threshold and Modulation Characteristics of Photon-Recycled Semiconductor Lasers
- Estimation of Threshold Current of Microcavity Surface Emitting Laser with Cylindrical Waveguide
- Ammonium Sulfide Passivation for AlGaAs/GaAs Buried Heterostructure Laser Fabrication Process
- A Novel Selective Growth Process Using Oxidized InAlAs Mask for Fabricating Photonic Devices and Photonic Integrated Circuits