Ammonium Sulfide Passivation for AlGaAs/GaAs Buried Heterostructure Laser Fabrication Process
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概要
- 論文の詳細を見る
We have introduced ammonium sulfide ((NH_4)_2S_X/(NH_4)_2S) treatment to reduce the surface recombination in the regrowth process of an AlGaAs/GaAs buried heterostructure (BH) laser by MOCVD. The (NH_4)_2S_X-treated BH lasers showed much lower threshold current than BH lasers without the chemical passivation. This fabrication technology is expected to be very effective for the realization of ultralow-threshold micro-cavity lasers with a few-micron or submicron cavity structure.
- 社団法人応用物理学会の論文
- 1991-03-15
著者
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics
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Tamanuki Takemasa
Networking Research Laboratories Nec Corporation:(present Address)interintelligence Inc.
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Tamanuki Takemasa
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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