A Novel Selective Growth Process Using Oxidized InAlAs Mask for Fabricating Photonic Devices and Photonic Integrated Circuits

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概要

• 論文の詳細を見る

• We have proposed and realized a novel selective growth technique using an oxidized In_<0.52>Al_<0.48>As mask. An InAlAs layer is selectively grown on top of a double hetero structure and then oxidized by conventional wet thermal method. Another oxidation process with HNO_3 solution is also demonstrated. Using oxidized masks, selective growth to form a buried hetero-structure was achieved for the first time. This simple technique, which does not require semiconductor etching, will reduce the cost of fabricating photonic devices and photonic integrated circuits for wavelength-division-multiplexing systems.

• 社団法人応用物理学会の論文
• 1999-08-15

著者

• Tsuji Masayoshi

  Optoelectronics And High-frequency Device Research Laboratories Nec Corporation

• SASAKI Tatsuya

  Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation

• Ishikawa Shin

  Optoelectronics And High-frequency Device Research Laboratories Nec Corporation

• Sasaki Tatsuya

  Optoelectronics And High-frequency Device Research Laboratories Nec Corporation

• Sasaki Tatsuya

  Optoelectronics And High Frequency Device Research Laboratories Nec Corporation

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• A Novel Selective Growth Process Using Oxidized InAlAs Mask for Fabricating Photonic Devices and Photonic Integrated Circuits

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