Single Low 2.4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1.9-GHz PHS Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
スポンサーリンク
概要
- 論文の詳細を見る
A Ga As power MESFET amplifier with a low-distortion, 10-dB gain-variable attenuator has been developed for 1.9-GHz Japanese personal handy phone system(PHS). Independently of its gain, a very low 600-kHz adjacent channel leakage power(ACP)with sufficient output power was attained. In single low 2.4-V supply operation, an output power of 21.1 dBm, a low dissipated current of 157 mA and a high power-added efficiency(PAE)of 37.2% were obtained with an ACP of -55dBc.
- 社団法人電子情報通信学会の論文
- 1998-06-25
著者
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Sasaki Tatsuya
Opto And Wireless Deivce Res. Labs. Nec Corporation
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Uchitomi N
Research And Development Center Toshiba Corp.
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亀山 敦
神奈川大学工学部化学教室
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Nagaoka Masami
Toshiba Research and Development Center
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Kawakyu Katsue
Toshiba Research and Development Center
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Kitaura Yoshiaki
Toshiba Research and Development Center
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Uchitomi Naotaka
Toshiba Research and Development Center
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Nagaoka M
Research And Development Center Toshiba Corp.
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Kitaura Y
Research And Development Center Toshiba Corp.
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WAKIMOTO Hirotsugu
Research and Development Center, Toshiba Corp.
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WAKIMOTO Hirotsugu
Toshiba Research and Development Center
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SESHITA Toshiki
Toshiba Research and Development Center
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KAMEYAMA Atsushi
Toshiba Research and Development Center
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Kawakyu Katsue
Toshiba Corp. Research And Development Center
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Sasaki T
Opto And Wireless Deivce Res. Labs. Nec Corporation
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Kameyama Atsushi
Toshiba Corporation Semiconductor Company
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Wakimoto Hirotsugu
Research And Development Center Toshiba Corp.
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Seshita Toshiki
Research And Development Center Toshiba Corp.
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