Refractory WN_x/W Self-Aligned Gate GaAs Power Metal-Semiconductor Field-Effect Transistor for 1.9-GHz Digital Mobile Communication System Operating with a Single Low-Voltage Supply
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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Uchitomi N
Research And Development Center Toshiba Corp.
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Ishida Koichi
Optoelectronics Joint Research Laboratory:(present Address) Fundamental Research Laboratories Nec Co
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Ishida K
Semiconductor System Engineering Center Toshiba Corporation
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Nagaoka Masami
Toshiba Research and Development Center
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Tanabe Yoshikazu
Toshiba Research and Development Center
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Yoshimura Misao
Toshiba Research and Development Center
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Ishida Kenji
Toshiba Research and Development Center
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Kitaura Yoshiaki
Toshiba Research and Development Center
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Uchitomi Naotaka
Toshiba Research and Development Center
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MATSUNAGA Tokuhiko
Toshiba R & D Center
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NISHIHORI Kazuya
Toshiba R & D Center
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HASHIMOTO Takashi
Toshiba R & D Center
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MIHARA Masakatsu
Toshiba R & D Center
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Nagaoka M
Research And Development Center Toshiba Corp.
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Nishihori K
Toshiba Corp. Kawasaki‐shi Jpn
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Kitaura Y
Research And Development Center Toshiba Corp.
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MIHARA Masakatsu
Research and Development Center, Toshiba Corp.
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Ishida K
Yamagata Univ. Yamagata Jpn
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Tanabe Y
Tokyo Inst. Of Technol. Yokohama‐shi
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吉村 昌弘
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Mihara Masakatsu
Research And Development Center Toshiba Corp.
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Tanabe Y
Hiroshima Univ. Higashihiroshima Jpn
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Tanabe Yoshikazu
Research And Development Center Toshiba Corp.
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石田 謙司
神戸大学 大学院工学研究科
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