Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-07-20
著者
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Kobayashi J
Optoelectronics Joint Research Laboratory:(present Address) Material & Electronic Devices Labora
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Ishida Koichi
Optoelectronics Joint Research Laboratory:(present Address) Fundamental Research Laboratories Nec Co
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Ishida Koichi
Optoelectronics Joint Research Laboratory
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Kobayashi Junji
Optoelectronics Joint Research Laboratory:(present Address) Material & Electronic Devices Labora
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Ishida K
Yamagata Univ. Yamagata Jpn
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TAKAMORI Takeshi
Optoelectronics Joint Research Laboratory
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NAKASHIMA Hisao
Optoelectronics Joint Research Laboratory
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FUKUNAGA Toshiaki
Optoelectronics Joint Research Laboratory
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FUKUNAGA Tsuneshi
Department of Materials Science and Ceramic Technology, Shonan Institute of Technology
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Ishida K
Taiyo Yuden Co. Ltd.
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KOBAYASHI Junji
Institute of Medicinal Chemistry, Hoshi University
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Kobayashi J
Kagami Memorial Laboratory For Materials Science And Technology Waseda University:research Developme
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Nakashima H
Hyogo University
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Nakashima Hideharu
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Fukunaga T
New Cosmos Electric Co. Ltd. Osaka Jpn
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Kobayashi J
Institute Of Medicinal Chemistry Hoshi University
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Takamori T
Opto-electronics Laboratories R&d Group Oki Electric Industry Co. Ltd.
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石田 謙司
神戸大学 大学院工学研究科
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