Thermal Diffusion of Buried Beryllium and Silicon Layer in GaAs Doped by Focused Ion Beam Implantation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-08-20
著者
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Morita T
Chiba Univ. Chiba Jpn
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HASHIMOTO Hisao
Optoelectronic Joint Research Laboratory
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Kobayashi Junji
Optoelectronics Joint Research Laboratory:(present Address) Material & Electronic Devices Labora
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MORITA Tetsuo
Optoelectronics Joint Research Laboratory
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MIYAUCHI Eizo
Optoelectronics Joint Research Laboratory
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TAKAMORI Takeshi
Optoelectronics Joint Research Laboratory
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Morita T
Optoelectronics Joint Research Laboratory
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Miyauchi E
Fujitsu Ltd. Kanagawa
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Takamori Akira
Optoelectronics Joint Research Laboratory:(present Address) Matsushita Electric Ind. Co.
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Morita T
Sumitomo Electric Inductries Ltd. Yokohama
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Takamori T
Opto-electronics Laboratories R&d Group Oki Electric Industry Co. Ltd.
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Kobayashi Junji
Optoelectronics Joint Research Laboratory:(present Address) Mitsubishi Electric Corp.
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