Takamori Akira | Optoelectronics Joint Research Laboratory:(present Address) Matsushita Electric Ind. Co.

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概要

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著作論文

High-Power 650-nm-Band AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl_2/N_2 Mixture
Reduction of Aspect Ratio in 650 nm-Band Self-Sustained-Pulsing Lasers with Saturable-Absorbing Layer
Extremely Low Astigmatism and Aspect Ratio in 650nm-Band Self-Pulsing AlGaInP Lasers with Strained-Quantum-Well Saturable-Absorbing Layer
650nm-Band High Power AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl_2/N_2 Mixture
Thermal Diffusion of Buried Beryllium and Silicon Layer in GaAs Doped by Focused Ion Beam Implantation
Alignment Signal from a Mark Deformed by Molecular Beam Epitaxial Overgrowth for Focused Ion Beam Implantation
Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation
Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide
Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs
GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter
Reduced Damage Generation in GaAs Implanted with Focused Be Ions
Pd-Ni-Si-Be-B Liquid Metal Ion Source for Maskless Ion Implantation
Novel Method for Measuring Intensity Distribution of Focused Ion Beams
Focused Si Ion Implantation in GaAs
GaAs Molecular Beam Epitaxy on Be Implanted GaAs Layers
Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System
Sn Ion Doping during GaAs MBE with Field Ion Gun

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