ARIMOTO Hiroshi | Optoelectronics Joint Research Laboratory
スポンサーリンク
概要
関連著者
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HASHIMOTO Hisao
Optoelectronic Joint Research Laboratory
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MIYAUCHI Eizo
Optoelectronics Joint Research Laboratory
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ARIMOTO Hiroshi
Optoelectronics Joint Research Laboratory
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Arimoto H
Fujitsu Lab. Ltd. Atsugi Jpn
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Miyauchi E
Fujitsu Ltd. Kanagawa
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Takamori Akira
Optoelectronics Joint Research Laboratory:(present Address) Matsushita Electric Ind. Co.
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BAMBA Yasuo
Optoelectronics Joint Research Laboratory
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BAMBA Yasuo
Fujitsu Laboratories Ltd.
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Bamba Y
Fujitsu Laboratories Ltd.
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Bamba Yasuo
Fujitsu Laboratories Limited
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Morita T
Chiba Univ. Chiba Jpn
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MORITA Tetsuo
Optoelectronics Joint Research Laboratory
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Morita T
Optoelectronics Joint Research Laboratory
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Morita T
Sumitomo Electric Inductries Ltd. Yokohama
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UTSUMI Takao
Optoelectronics Joint Research Laboratory
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Utsumi Takao
Optoelectronics Joint Research Laboratory (ojrl)
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Nakajima M
Optoelectronics Joint Research Lab. Kawasaki Jpn
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NAKAJIMA Masato
Optoelectronics Joint Research Laboratory
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Kuramoto Kazuo
Optoelectronics Joint Research Laboratory
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FURUYA Tsuneo
Optoelectronics Joint Research Laboratory
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Furuya Tsuneo
Optoelectronics Joint Research Laboratory:(present Address)fujitsu Laboratories Ltd.
著作論文
- Alignment Signal from a Mark Deformed by Molecular Beam Epitaxial Overgrowth for Focused Ion Beam Implantation
- Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide
- Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs
- GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter
- Reduced Damage Generation in GaAs Implanted with Focused Be Ions
- Pd-Ni-Si-Be-B Liquid Metal Ion Source for Maskless Ion Implantation
- Novel Method for Measuring Intensity Distribution of Focused Ion Beams
- Focused Si Ion Implantation in GaAs
- GaAs Molecular Beam Epitaxy on Be Implanted GaAs Layers
- Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System
- Alignment Accuracy of Focused Ion Beam Implantation
- Dependene of Focused Ion Beam Intensity Profile on Ion Species at Several Orders of Magnitude below the Peak Intensity
- Novel Methods for Measuring Diameter of Focused Ion Beam
- Positional Stability of Focused Ion Beams
- Zn and Si Ion Emission from Au-Zn-Si LM Ion Source
- Effect of Ambient Gases on Emission Properties of Pd-Ni-Si-Be-B LM Ion Source
- Emission Stability of Au-Si-Be LM Ion Source in Various Gas Environments
- Emission Characteristics of Au-Si-Be LM Ion Source
- A 100 kV Maskless Ion-Implantation System with an Au-Si-Be Liquid Metal Ion Source for III-V Compound Semiconductors