Zn and Si Ion Emission from Au-Zn-Si LM Ion Source
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概要
- 論文の詳細を見る
An Au-Zn-Si LM (liquid metal) ion source for Zn ion beam, which can promote a compositional disordering of GaAs-AlAs superlattices as well as act as a p-type dopant in III-V compound semiconductors, has been demonstrated. The lifetime of this source was restricted to about 50 hours due to a selective evaporation of Zn atoms from the liquid alloy surface. However, the vapor pressure of Zn in the alloy at 410℃ was estimated to be 2.3×10^<-3>Pa(1.7×10^<-5>Torr).This value is 4 orders smaller than that of elemental Zn.
- 社団法人応用物理学会の論文
- 1987-04-20
著者
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HASHIMOTO Hisao
Optoelectronic Joint Research Laboratory
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MIYAUCHI Eizo
Optoelectronics Joint Research Laboratory
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Miyauchi E
Fujitsu Ltd. Kanagawa
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ARIMOTO Hiroshi
Optoelectronics Joint Research Laboratory
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Arimoto H
Fujitsu Lab. Ltd. Atsugi Jpn
関連論文
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- Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation
- Thermal Diffusion of Buried Beryllium and Silicon Layer in GaAs Doped by Focused Ion Beam Implantation
- Alignment Signal from a Mark Deformed by Molecular Beam Epitaxial Overgrowth for Focused Ion Beam Implantation
- Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation
- Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide
- Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs
- GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter
- Reduced Damage Generation in GaAs Implanted with Focused Be Ions
- Pd-Ni-Si-Be-B Liquid Metal Ion Source for Maskless Ion Implantation
- Novel Method for Measuring Intensity Distribution of Focused Ion Beams
- Focused Si Ion Implantation in GaAs
- GaAs Molecular Beam Epitaxy on Be Implanted GaAs Layers
- Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System
- Sn Ion Doping during GaAs MBE with Field Ion Gun
- Alignment Accuracy of Focused Ion Beam Implantation
- Dependene of Focused Ion Beam Intensity Profile on Ion Species at Several Orders of Magnitude below the Peak Intensity
- Novel Methods for Measuring Diameter of Focused Ion Beam
- Positional Stability of Focused Ion Beams
- Numerical Study of Effect of Fabrication Damage on Carrier Dynamics in MQW Narrow Wires
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- Effect of Ambient Gases on Emission Properties of Pd-Ni-Si-Be-B LM Ion Source
- Emission Stability of Au-Si-Be LM Ion Source in Various Gas Environments
- Emission Characteristics of Au-Si-Be LM Ion Source
- A 100 kV Maskless Ion-Implantation System with an Au-Si-Be Liquid Metal Ion Source for III-V Compound Semiconductors
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