Emission Stability of Au-Si-Be LM Ion Source in Various Gas Environments
スポンサーリンク
概要
- 論文の詳細を見る
Emission stability of a Au-Si-Be liquid metal (LM) ion source under various gas environments has been investigated. It was found that the ion emission stability was influenced by oxygen or water vapor which seemed to result in oxidation of the alloy surface. Water vapor is particularly active with Be atoms in the alloy. We have confirmed that stationary, stable ion beams (Si, Be) with a constant ion current and a beam diameter can be obtained by operating the ion source under a high vacuum enclosure of 2×10^<-7> Torr in a 100 kV focused ion beam implanter (FIBI).
- 社団法人応用物理学会の論文
- 1986-07-20
著者
-
HASHIMOTO Hisao
Optoelectronic Joint Research Laboratory
-
MIYAUCHI Eizo
Optoelectronics Joint Research Laboratory
-
Miyauchi E
Fujitsu Ltd. Kanagawa
-
ARIMOTO Hiroshi
Optoelectronics Joint Research Laboratory
-
Arimoto H
Fujitsu Lab. Ltd. Atsugi Jpn
関連論文
- Arsenic Pressure Dependence of Interdiffusion of AlGaAs/GaAs Interface in Quantum Well
- Comparison of Lateral Resolution of Fine Stripes Beryllium and Boron Implanted by Focused Ion Beam in Si-Doped AlGaAs/GaAs Multiquantum Wells
- Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused si Ion Beam Implantation
- Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation
- Thermal Diffusion of Buried Beryllium and Silicon Layer in GaAs Doped by Focused Ion Beam Implantation
- Alignment Signal from a Mark Deformed by Molecular Beam Epitaxial Overgrowth for Focused Ion Beam Implantation
- Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation
- Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide
- Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs
- GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter
- Reduced Damage Generation in GaAs Implanted with Focused Be Ions
- Pd-Ni-Si-Be-B Liquid Metal Ion Source for Maskless Ion Implantation
- Novel Method for Measuring Intensity Distribution of Focused Ion Beams
- Focused Si Ion Implantation in GaAs
- GaAs Molecular Beam Epitaxy on Be Implanted GaAs Layers
- Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System
- Sn Ion Doping during GaAs MBE with Field Ion Gun
- Alignment Accuracy of Focused Ion Beam Implantation
- Dependene of Focused Ion Beam Intensity Profile on Ion Species at Several Orders of Magnitude below the Peak Intensity
- Novel Methods for Measuring Diameter of Focused Ion Beam
- Positional Stability of Focused Ion Beams
- Numerical Study of Effect of Fabrication Damage on Carrier Dynamics in MQW Narrow Wires
- Zn and Si Ion Emission from Au-Zn-Si LM Ion Source
- Effect of Ambient Gases on Emission Properties of Pd-Ni-Si-Be-B LM Ion Source
- Emission Stability of Au-Si-Be LM Ion Source in Various Gas Environments
- Emission Characteristics of Au-Si-Be LM Ion Source
- A 100 kV Maskless Ion-Implantation System with an Au-Si-Be Liquid Metal Ion Source for III-V Compound Semiconductors
- Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
- Topographical Contrast of Secondary Electron Intensity Profiles in Focused Ion Beam Implantation : Techniques, Instrumentations and Measurement
- Au-Si-Be Liquid Metal Ion Source for Maskless Ion Implantation