A 100 kV Maskless Ion-Implantation System with an Au-Si-Be Liquid Metal Ion Source for III-V Compound Semiconductors
スポンサーリンク
概要
- 論文の詳細を見る
A newly developed Au-Si-Be liquid metal ion source has been incorporated to a 100 kV focused ion beam system. Among several ion species emitted from the single ion emitter, doubly ionized Si and Be have been selected by the crossed electric and magnetic field (E×B) mass separator and have been formed into a finely focused beam. This new system was found capable of focusing those ions down to a diameter of about 0.1 μm. It has also been found that, using the fine focusing for n- and p-doping, desired ion species (Si^<++> and Be^<++>) can be exchanged simply by adjusting the electric field of the E×B mass separator.
- 社団法人応用物理学会の論文
- 1983-05-20
著者
-
HASHIMOTO Hisao
Optoelectronic Joint Research Laboratory
-
MIYAUCHI Eizo
Optoelectronics Joint Research Laboratory
-
ARIMOTO Hiroshi
Optoelectronics Joint Research Laboratory
-
UTSUMI Takao
Optoelectronics Joint Research Laboratory
-
FURUYA Tsuneo
Optoelectronics Joint Research Laboratory
-
Utsumi Takao
Optoelectronics Joint Research Laboratory (ojrl)
-
Furuya Tsuneo
Optoelectronics Joint Research Laboratory:(present Address)fujitsu Laboratories Ltd.
関連論文
- Arsenic Pressure Dependence of Interdiffusion of AlGaAs/GaAs Interface in Quantum Well
- Comparison of Lateral Resolution of Fine Stripes Beryllium and Boron Implanted by Focused Ion Beam in Si-Doped AlGaAs/GaAs Multiquantum Wells
- Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused si Ion Beam Implantation
- Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation
- Thermal Diffusion of Buried Beryllium and Silicon Layer in GaAs Doped by Focused Ion Beam Implantation
- Alignment Signal from a Mark Deformed by Molecular Beam Epitaxial Overgrowth for Focused Ion Beam Implantation
- Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation
- Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide
- Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs
- GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter
- Reduced Damage Generation in GaAs Implanted with Focused Be Ions
- Pd-Ni-Si-Be-B Liquid Metal Ion Source for Maskless Ion Implantation
- Novel Method for Measuring Intensity Distribution of Focused Ion Beams
- Focused Si Ion Implantation in GaAs
- GaAs Molecular Beam Epitaxy on Be Implanted GaAs Layers
- Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System
- Sn Ion Doping during GaAs MBE with Field Ion Gun
- Alignment Accuracy of Focused Ion Beam Implantation
- Dependene of Focused Ion Beam Intensity Profile on Ion Species at Several Orders of Magnitude below the Peak Intensity
- Novel Methods for Measuring Diameter of Focused Ion Beam
- Positional Stability of Focused Ion Beams
- Zn and Si Ion Emission from Au-Zn-Si LM Ion Source
- Effect of Ambient Gases on Emission Properties of Pd-Ni-Si-Be-B LM Ion Source
- Emission Stability of Au-Si-Be LM Ion Source in Various Gas Environments
- Emission Characteristics of Au-Si-Be LM Ion Source
- A 100 kV Maskless Ion-Implantation System with an Au-Si-Be Liquid Metal Ion Source for III-V Compound Semiconductors
- Topographical Contrast of Secondary Electron Intensity Profiles in Focused Ion Beam Implantation : Techniques, Instrumentations and Measurement
- Au-Si-Be Liquid Metal Ion Source for Maskless Ion Implantation