Topographical Contrast of Secondary Electron Intensity Profiles in Focused Ion Beam Implantation : Techniques, Instrumentations and Measurement
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概要
- 論文の詳細を見る
A new calculation method of secondary intensity profiles in the case of scanning the focused ion beam across an alignment mark is proposed. The secondary electron intensity profiles depend on the energy of the incident ion, surface conditions of the target material and topography of the substrate, etc. Secondary electron intensity profiles can be easily calculated for variation of geometrical parameters without Monte Carlo calculation. The collection efficiency of secondary electrons is also included in this calculation. The calculated results agree with the measured ones.
- 社団法人応用物理学会の論文
- 1988-09-20
著者
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HASHIMOTO Hisao
Optoelectronic Joint Research Laboratory
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MORITA Tetsuo
Optoelectronics Joint Research Laboratory
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Hashimoto Hisao
Optoelectronics Joint Research Laboratory
関連論文
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- Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused si Ion Beam Implantation
- Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation
- Thermal Diffusion of Buried Beryllium and Silicon Layer in GaAs Doped by Focused Ion Beam Implantation
- Alignment Signal from a Mark Deformed by Molecular Beam Epitaxial Overgrowth for Focused Ion Beam Implantation
- Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation
- Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide
- Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs
- GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter
- Reduced Damage Generation in GaAs Implanted with Focused Be Ions
- Pd-Ni-Si-Be-B Liquid Metal Ion Source for Maskless Ion Implantation
- Novel Method for Measuring Intensity Distribution of Focused Ion Beams
- Focused Si Ion Implantation in GaAs
- GaAs Molecular Beam Epitaxy on Be Implanted GaAs Layers
- Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System
- Alignment Accuracy of Focused Ion Beam Implantation
- Dependene of Focused Ion Beam Intensity Profile on Ion Species at Several Orders of Magnitude below the Peak Intensity
- Novel Methods for Measuring Diameter of Focused Ion Beam
- Positional Stability of Focused Ion Beams
- Zn and Si Ion Emission from Au-Zn-Si LM Ion Source
- Effect of Ambient Gases on Emission Properties of Pd-Ni-Si-Be-B LM Ion Source
- Emission Stability of Au-Si-Be LM Ion Source in Various Gas Environments
- Emission Characteristics of Au-Si-Be LM Ion Source
- A 100 kV Maskless Ion-Implantation System with an Au-Si-Be Liquid Metal Ion Source for III-V Compound Semiconductors
- Topographical Contrast of Secondary Electron Intensity Profiles in Focused Ion Beam Implantation : Techniques, Instrumentations and Measurement
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