Alignment Accuracy of Focused Ion Beam Implantation
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-06-20
著者
-
Morita T
Chiba Univ. Chiba Jpn
-
HASHIMOTO Hisao
Optoelectronic Joint Research Laboratory
-
MORITA Tetsuo
Optoelectronics Joint Research Laboratory
-
MIYAUCHI Eizo
Optoelectronics Joint Research Laboratory
-
Morita T
Optoelectronics Joint Research Laboratory
-
Miyauchi E
Fujitsu Ltd. Kanagawa
-
ARIMOTO Hiroshi
Optoelectronics Joint Research Laboratory
-
Morita T
Sumitomo Electric Inductries Ltd. Yokohama
-
Arimoto H
Fujitsu Lab. Ltd. Atsugi Jpn
関連論文
- Orthovanadate Stimulates cAMP Phosphodiesterase 3 Activity in Isolated Rat Hepatocytes through Mitogen-Activated Protein Kinase Activation Dependent on cAMP-Dependent Protein Kinase(Biochemistry/Molecular Biology)
- Arsenic Pressure Dependence of Interdiffusion of AlGaAs/GaAs Interface in Quantum Well
- Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy
- Comparison of Lateral Resolution of Fine Stripes Beryllium and Boron Implanted by Focused Ion Beam in Si-Doped AlGaAs/GaAs Multiquantum Wells
- Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused si Ion Beam Implantation
- Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation
- Thermal Diffusion of Buried Beryllium and Silicon Layer in GaAs Doped by Focused Ion Beam Implantation
- Alignment Signal from a Mark Deformed by Molecular Beam Epitaxial Overgrowth for Focused Ion Beam Implantation
- Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation
- Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide
- Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs
- GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter
- Reduced Damage Generation in GaAs Implanted with Focused Be Ions
- Pd-Ni-Si-Be-B Liquid Metal Ion Source for Maskless Ion Implantation
- Novel Method for Measuring Intensity Distribution of Focused Ion Beams
- Focused Si Ion Implantation in GaAs
- GaAs Molecular Beam Epitaxy on Be Implanted GaAs Layers
- Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System
- Sn Ion Doping during GaAs MBE with Field Ion Gun
- Alignment Accuracy of Focused Ion Beam Implantation
- Dependene of Focused Ion Beam Intensity Profile on Ion Species at Several Orders of Magnitude below the Peak Intensity
- Novel Methods for Measuring Diameter of Focused Ion Beam
- Positional Stability of Focused Ion Beams
- Okadaic Acid Decreases the Leptin Content in Isolated Mouse Fat Pads(Biochemistry/Molecular Biology)
- Orthovanadate Decreases Leptin Secretion from Isolated Mouse Fat Pads
- A Vanadyl Sulfate-Bovine Serum Albumin Complex Stimulates the Release of Lipoprotein Lipase Activity from Isolated Rat Fat Pads through an Increase in the Cellular Content of cAMP and myo-Inositol 1,4,5-Trisphosphate
- Involvement of Adenosine in Vanadate-Stimulated Release of Lipoprotein Lipase Activity
- Enhancement of the Vanadate-Stimulated Release of Lipoprotein Lipase Activity be Astilbin from the Leaves of Engelhardtia Chrysolepis
- Involvement of the Rapid Increase in cAMP Content in the Vanadate-Stimulated Release of Lipoprotein Lipase Activity from Rat Fat Pads
- Numerical Study of Effect of Fabrication Damage on Carrier Dynamics in MQW Narrow Wires
- Zn and Si Ion Emission from Au-Zn-Si LM Ion Source
- Effect of Ambient Gases on Emission Properties of Pd-Ni-Si-Be-B LM Ion Source
- Emission Stability of Au-Si-Be LM Ion Source in Various Gas Environments
- Emission Characteristics of Au-Si-Be LM Ion Source
- Involvement of Leukotriene Production in Release of Hepatic Lipase Activity Produced by Heparin from Rat Hepatocytes
- Rapid Increase in the Leukotriene B_4 Concentration of Cultured Rat Hepatocytes by Heparin
- Involvement of Ca^/Calmodulin-Dependent Protein Kinase II in Heparin-Stimulated Release of Hepatic Lipase Activity from Rat Hepatocytes(Biochemistry/Molecular Biology)
- A 100 kV Maskless Ion-Implantation System with an Au-Si-Be Liquid Metal Ion Source for III-V Compound Semiconductors
- Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
- Topographical Contrast of Secondary Electron Intensity Profiles in Focused Ion Beam Implantation : Techniques, Instrumentations and Measurement
- Au-Si-Be Liquid Metal Ion Source for Maskless Ion Implantation