Fukuhisa T | Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
スポンサーリンク
概要
関連著者
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Adachi Hiroaki
Graduate School Of Science And Technology Kobe University
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Adachi Hideo
Applied Research Department Corporate Research Division Olympus Optical Co. Ltd.
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Adachi Hisanori
Department Of Polymer Science And Engineering Kyoto Institute Of Technology
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ADACHI Hideto
Semiconductor Research Center Matsushita Electric Industrial Co., Ltd.
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Adachi H
Department Of Polymer Science And Engineering Kyoto Institute Of Technology
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KIDOGUCHI Isao
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd,
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TANAKA Kiyotake
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd,
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FUKUHISA Toshiya
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd,
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TAKAMORI Akira
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd,
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MANNOH Masaya
Semiconductor Research Center Matsushita Electric Industrial Co., Ltd.
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Adachi Hideto
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Tanaka K
Murata Manufacturing Co. Ltd.
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Mannoh Masaya
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Takamori Akira
Optoelectronics Joint Research Laboratory:(present Address) Matsushita Electric Ind. Co.
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Takamori A
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Fukuhisa T
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
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Kidoguchi Isao
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Fukuhisa Toshiya
Semiconductor Research Center Matsushita Electric Industrial Co., Ltd.
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TAKAMORI Akira
Semiconductor Research Center Matsushita Electric Industrial Co., Ltd.
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MONNOH Masaya
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd,
著作論文
- High-Power 650-nm-Band AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl_2/N_2 Mixture
- Reduction of Aspect Ratio in 650 nm-Band Self-Sustained-Pulsing Lasers with Saturable-Absorbing Layer
- Extremely Low Astigmatism and Aspect Ratio in 650nm-Band Self-Pulsing AlGaInP Lasers with Strained-Quantum-Well Saturable-Absorbing Layer
- 650nm-Band High Power AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl_2/N_2 Mixture