Thermal Quenching of the Photoluminescence of InGaAs/GaAs Single Quantum Wells Adjacent to a Selectively Oxidized AlAs Layer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-01
著者
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KAMIJOH Takeshi
Semiconductor Technology Laboratory, Oki Electric Industry Co. Ltd.
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Pratt Andrew
Opto-electronics Laboratories R&d Group Oki Electric Industry Co. Ltd.
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Takemasa Keizo
Opto-electronics Laboratories Research And Development Group Oki Electric Industry Co. Ltd.
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Kamijoh Takeshi
Optoelectronics Technology Research Laboratory
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Kamijoh Takeshi
Opto-electronics Laboratories R&d Group Oki Electric Industry Co. Ltd.
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Kamihoh T
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Kamijoh Takeshi
Research And Development Group Oki Electric Industry Co. Ltd.
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Kamijoh T
Oki Electric Co. Ltd. Hachioji‐shi Jpn
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TAKAMORI Takeshi
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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Pratt Andrew
The Authors Are With The Opto-electronics Laboratories Oki Electric Industry Co.ltd.
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PRATT Andrew
Semiconductor Technology Laboratory, Research and Development Group, Oki Electric Industry Co., Ltd.
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Takamori T
Opto-electronics Laboratories R&d Group Oki Electric Industry Co. Ltd.
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Takamori Takeshi
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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