Implantation Energy Dependence of Composilional Disordering in Si Implanted GaAs/AlGaAs Superlattices Studied by Secondary Jon Mass Speetrometry
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-08-20
著者
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Kobayashi J
Optoelectronics Joint Research Laboratory:(present Address) Material & Electronic Devices Labora
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MATSUI Kensuke
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Ishida Koichi
Optoelectronics Joint Research Laboratory:(present Address) Fundamental Research Laboratories Nec Co
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Ishida Koichi
Optoelectronics Joint Research Laboratory
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MATSUI Ken-ichi
Department of Physics, Faculty of Science, Osaka University
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Kobayashi Junji
Optoelectronics Joint Research Laboratory:(present Address) Material & Electronic Devices Labora
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Ishida K
Yamagata Univ. Yamagata Jpn
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NAKASHIMA Hisao
Optoelectronics Joint Research Laboratory
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FUKUNAGA Toshiaki
Optoelectronics Joint Research Laboratory
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MATSUI Kazunori
Optoelectronics Joint Research Laboratory
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FUKUNAGA Tsuneshi
Department of Materials Science and Ceramic Technology, Shonan Institute of Technology
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Ishida K
Taiyo Yuden Co. Ltd.
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KOBAYASHI Junji
Institute of Medicinal Chemistry, Hoshi University
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Kobayashi J
Kagami Memorial Laboratory For Materials Science And Technology Waseda University:research Developme
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Fukunaga T
New Cosmos Electric Co. Ltd. Osaka Jpn
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Matsui Kazunori
Department Of Chemistry College Of Engineering Kanto Gakuin University
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Kobayashi J
Institute Of Medicinal Chemistry Hoshi University
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石田 謙司
神戸大学 大学院工学研究科
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