NAKASHIMA Hisao | Optoelectronics Joint Research Laboratory

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概要

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著作論文

Comparison of Lateral Resolution of Fine Stripes Beryllium and Boron Implanted by Focused Ion Beam in Si-Doped AlGaAs/GaAs Multiquantum Wells
Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates
Disordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs
Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused si Ion Beam Implantation
Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation
SIMS Study of Si-Be Co-doping Effects for Suppression of Compositional Disordering in AlGaAs-GaAs Superlattices
Fabrication of Index-Guided AlGaAs Multiquantum Well Lasers with Buried Optical Guide by Si-Induced Disordering
Implantation Energy Dependence of Composilional Disordering in Si Implanted GaAs/AlGaAs Superlattices Studied by Secondary Jon Mass Speetrometry
SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs-GaAs Superlattice
Ion-Implantation Induced Damage in Al_xGa_As and Superlattices Studied by Rutherford Backscattering
Damage Profile in GaAs, AlAs, AlGaAs, and GaAs/AlGaAs Superlattices Induced by Si^+-Ion Implantation
A Model for DX Centers : Bond Reconstruction due to Local Random Donor-Host Atom Configurations in Mixed Semiconductor Alloys
GaAs MESFET's with a Thermally Stable LaB_6 Self-Aligned Gate
Study of Thermal Stability of LaB_6 and GaAs Interfaces by High Energy Ion Scattering
AlGaAs Window Stripe Buried Multiquantum Well Lasers
Cross Sectional Transmission Electron Microscopy of Zn Diffusion Induced Disordering of GaAlAs-GaAs Multiquantum-Well Structures
AlGaAs/GaAs Multiquantum Well Lasers with Buried Multiquantum Well Optical Guide
Photoluminescence from AlGaAs-GaAs Single Quentum Wells with Growth Interrupted Heterointerfaces Grown by Molecular Beam Epitaxy
Surface Defect Formation in GaAs Layers Grown on Intentionally Contaminated Substrate by Molecular Beam Epitaxy
AlGaAs/GaAs Buried Multiquantum Well Lasers with a Reactive Ion Etched Window Facet
Interface Analysis of Al_2O_3/InP Structure Prepared by Molecular Beam Deposition
High Energy Ion Channeling Study of MBE-Grown GaAs(001) Surface Structures
Low-Temperature Photoluminescence of Lightly 81-Doped Al_xGa_As on (511) GaAs Substrates Grown by Molecular Beam Epitaxy
Photoluminescenee from AlGaAs-GaAs Single Quantum Welts with Growth Interrupted Heleroinlerfaces Grown on GaAs (100) and (311) Substrates at Various Growth Temperatures by Molecular Beam Epitaxy
Photoluminescence Study of GaAs-AlGaAs Multiquantum Well Grown by Molecular-Beam Epitaxy
Schottky Interface Formation between LaB6 and GaAs(001) Covered with a Native-Oxide Layer

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