A Model for DX Centers : Bond Reconstruction due to Local Random Donor-Host Atom Configurations in Mixed Semiconductor Alloys
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-12-20
著者
-
Kobayashi Keisuke
Optoelectronics Joint Research Laboratory
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NAKASHIMA Hisao
Optoelectronics Joint Research Laboratory
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Uchida Yoko
Optoelectronics Joint Research Laboratory
関連論文
- Comparison of Lateral Resolution of Fine Stripes Beryllium and Boron Implanted by Focused Ion Beam in Si-Doped AlGaAs/GaAs Multiquantum Wells
- Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates
- Disordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs
- Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused si Ion Beam Implantation
- Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation
- SIMS Study of Si-Be Co-doping Effects for Suppression of Compositional Disordering in AlGaAs-GaAs Superlattices
- Fabrication of Index-Guided AlGaAs Multiquantum Well Lasers with Buried Optical Guide by Si-Induced Disordering
- Implantation Energy Dependence of Composilional Disordering in Si Implanted GaAs/AlGaAs Superlattices Studied by Secondary Jon Mass Speetrometry
- SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs-GaAs Superlattice
- Ion-Implantation Induced Damage in Al_xGa_As and Superlattices Studied by Rutherford Backscattering
- Damage Profile in GaAs, AlAs, AlGaAs, and GaAs/AlGaAs Superlattices Induced by Si^+-Ion Implantation
- A Model for DX Centers : Bond Reconstruction due to Local Random Donor-Host Atom Configurations in Mixed Semiconductor Alloys
- GaAs MESFET's with a Thermally Stable LaB_6 Self-Aligned Gate
- Study of Thermal Stability of LaB_6 and GaAs Interfaces by High Energy Ion Scattering
- AlGaAs Window Stripe Buried Multiquantum Well Lasers
- Cross Sectional Transmission Electron Microscopy of Zn Diffusion Induced Disordering of GaAlAs-GaAs Multiquantum-Well Structures
- AlGaAs/GaAs Multiquantum Well Lasers with Buried Multiquantum Well Optical Guide
- Photoluminescence from AlGaAs-GaAs Single Quentum Wells with Growth Interrupted Heterointerfaces Grown by Molecular Beam Epitaxy
- Surface Defect Formation in GaAs Layers Grown on Intentionally Contaminated Substrate by Molecular Beam Epitaxy
- AlGaAs/GaAs Buried Multiquantum Well Lasers with a Reactive Ion Etched Window Facet
- Interface Analysis of Al_2O_3/InP Structure Prepared by Molecular Beam Deposition
- High Energy Ion Channeling Study of MBE-Grown GaAs(001) Surface Structures
- Low-Temperature Photoluminescence of Lightly 81-Doped Al_xGa_As on (511) GaAs Substrates Grown by Molecular Beam Epitaxy
- Photoluminescenee from AlGaAs-GaAs Single Quantum Welts with Growth Interrupted Heleroinlerfaces Grown on GaAs (100) and (311) Substrates at Various Growth Temperatures by Molecular Beam Epitaxy
- Photoluminescence Study of GaAs-AlGaAs Multiquantum Well Grown by Molecular-Beam Epitaxy
- Schottky Interface Formation between LaB6 and GaAs(001) Covered with a Native-Oxide Layer