High Energy Ion Channeling Study of MBE-Grown GaAs(001) Surface Structures
スポンサーリンク
概要
- 論文の詳細を見る
We have applied the MeV He^+ ion channeling technique to study the atomic structure of MBE-grown GaAs(001) surfaces. The inherent sensitivity of our technique to small displacements of surface atoms shows that the As-stabilized GaAs(001)-c(4×4) surface structure contains significant lateral displacements of the first layer As atoms, which are associated with subsurface strain extending down to at least the 4th atomic layer. In contrast, the hydrogen-saturated (1×1) surface has a bulk-like atomic structure.
- 社団法人応用物理学会の論文
- 1985-02-20
著者
-
Kobayashi Keisuke
Optoelectronics Joint Research Laboratory
-
NAKASHIMA Hisao
Optoelectronics Joint Research Laboratory
-
Narusawa Tadashi
Optoelectronics Joint Research Laboratory
関連論文
- Comparison of Lateral Resolution of Fine Stripes Beryllium and Boron Implanted by Focused Ion Beam in Si-Doped AlGaAs/GaAs Multiquantum Wells
- Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates
- Disordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs
- Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused si Ion Beam Implantation
- Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation
- SIMS Study of Si-Be Co-doping Effects for Suppression of Compositional Disordering in AlGaAs-GaAs Superlattices
- Fabrication of Index-Guided AlGaAs Multiquantum Well Lasers with Buried Optical Guide by Si-Induced Disordering
- Implantation Energy Dependence of Composilional Disordering in Si Implanted GaAs/AlGaAs Superlattices Studied by Secondary Jon Mass Speetrometry
- SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs-GaAs Superlattice
- Ion-Implantation Induced Damage in Al_xGa_As and Superlattices Studied by Rutherford Backscattering
- Damage Profile in GaAs, AlAs, AlGaAs, and GaAs/AlGaAs Superlattices Induced by Si^+-Ion Implantation
- A Model for DX Centers : Bond Reconstruction due to Local Random Donor-Host Atom Configurations in Mixed Semiconductor Alloys
- GaAs MESFET's with a Thermally Stable LaB_6 Self-Aligned Gate
- Study of Thermal Stability of LaB_6 and GaAs Interfaces by High Energy Ion Scattering
- AlGaAs Window Stripe Buried Multiquantum Well Lasers
- Cross Sectional Transmission Electron Microscopy of Zn Diffusion Induced Disordering of GaAlAs-GaAs Multiquantum-Well Structures
- AlGaAs/GaAs Multiquantum Well Lasers with Buried Multiquantum Well Optical Guide
- Photoluminescence from AlGaAs-GaAs Single Quentum Wells with Growth Interrupted Heterointerfaces Grown by Molecular Beam Epitaxy
- Surface Defect Formation in GaAs Layers Grown on Intentionally Contaminated Substrate by Molecular Beam Epitaxy
- AlGaAs/GaAs Buried Multiquantum Well Lasers with a Reactive Ion Etched Window Facet
- Interface Analysis of Al_2O_3/InP Structure Prepared by Molecular Beam Deposition
- High Energy Ion Channeling Study of MBE-Grown GaAs(001) Surface Structures
- Low-Temperature Photoluminescence of Lightly 81-Doped Al_xGa_As on (511) GaAs Substrates Grown by Molecular Beam Epitaxy
- Photoluminescenee from AlGaAs-GaAs Single Quantum Welts with Growth Interrupted Heleroinlerfaces Grown on GaAs (100) and (311) Substrates at Various Growth Temperatures by Molecular Beam Epitaxy
- Photoluminescence Study of GaAs-AlGaAs Multiquantum Well Grown by Molecular-Beam Epitaxy
- Schottky Interface Formation between LaB6 and GaAs(001) Covered with a Native-Oxide Layer