Schottky Interface Formation between LaB6 and GaAs(001) Covered with a Native-Oxide Layer
スポンサーリンク
概要
- 論文の詳細を見る
The influence of native-oxide layers on LaB6–GaAs(001) interface formation has been studied by X-ray photoelectron spectroscopy (XPS). LaB6 deposition reduces the GaAs native-oxide layer, and subsequent heat-treatment enhances the reduction. The behavior of band-bending of the LaB6–GaAs interface due to heat-treatment is similar to the case of the freshly MBE-grown surface.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-06-20
著者
-
NAKASHIMA Hisao
Optoelectronics Joint Research Laboratory
-
Narusawa Tadashi
Optoelectronics Joint Research Laboratory
-
YOKOTSUKA Tatsuo
Optoelectronics Joint Research Laboratory
-
Narusawa Tadashi
Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211
-
Yokotsuka Tatsuo
Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211
関連論文
- Comparison of Lateral Resolution of Fine Stripes Beryllium and Boron Implanted by Focused Ion Beam in Si-Doped AlGaAs/GaAs Multiquantum Wells
- Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates
- Disordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs
- Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused si Ion Beam Implantation
- Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation
- SIMS Study of Si-Be Co-doping Effects for Suppression of Compositional Disordering in AlGaAs-GaAs Superlattices
- Fabrication of Index-Guided AlGaAs Multiquantum Well Lasers with Buried Optical Guide by Si-Induced Disordering
- Implantation Energy Dependence of Composilional Disordering in Si Implanted GaAs/AlGaAs Superlattices Studied by Secondary Jon Mass Speetrometry
- SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs-GaAs Superlattice
- Ion-Implantation Induced Damage in Al_xGa_As and Superlattices Studied by Rutherford Backscattering
- Damage Profile in GaAs, AlAs, AlGaAs, and GaAs/AlGaAs Superlattices Induced by Si^+-Ion Implantation
- A Model for DX Centers : Bond Reconstruction due to Local Random Donor-Host Atom Configurations in Mixed Semiconductor Alloys
- GaAs MESFET's with a Thermally Stable LaB_6 Self-Aligned Gate
- Study of Thermal Stability of LaB_6 and GaAs Interfaces by High Energy Ion Scattering
- AlGaAs Window Stripe Buried Multiquantum Well Lasers
- Cross Sectional Transmission Electron Microscopy of Zn Diffusion Induced Disordering of GaAlAs-GaAs Multiquantum-Well Structures
- AlGaAs/GaAs Multiquantum Well Lasers with Buried Multiquantum Well Optical Guide
- Photoluminescence from AlGaAs-GaAs Single Quentum Wells with Growth Interrupted Heterointerfaces Grown by Molecular Beam Epitaxy
- Surface Defect Formation in GaAs Layers Grown on Intentionally Contaminated Substrate by Molecular Beam Epitaxy
- AlGaAs/GaAs Buried Multiquantum Well Lasers with a Reactive Ion Etched Window Facet
- Interface Analysis of Al_2O_3/InP Structure Prepared by Molecular Beam Deposition
- High Energy Ion Channeling Study of MBE-Grown GaAs(001) Surface Structures
- Low-Temperature Photoluminescence of Lightly 81-Doped Al_xGa_As on (511) GaAs Substrates Grown by Molecular Beam Epitaxy
- Photoluminescenee from AlGaAs-GaAs Single Quantum Welts with Growth Interrupted Heleroinlerfaces Grown on GaAs (100) and (311) Substrates at Various Growth Temperatures by Molecular Beam Epitaxy
- Photoluminescence Study of GaAs-AlGaAs Multiquantum Well Grown by Molecular-Beam Epitaxy
- Schottky Interface Formation between LaB6 and GaAs(001) Covered with a Native-Oxide Layer