Surface Defect Formation in GaAs Layers Grown on Intentionally Contaminated Substrate by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-07-20
著者
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Kobayashi K
Optoelectronics Joint Research Laboratory
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Kobayashi Keisuke
Optoelectronics Joint Research Laboratory
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NAKASHIMA Hisao
Optoelectronics Joint Research Laboratory
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FUKUNAGA Toshiaki
Optoelectronics Joint Research Laboratory
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FUKUNAGA Tsuneshi
Department of Materials Science and Ceramic Technology, Shonan Institute of Technology
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Nakashima Hideharu
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Watanabe Nozomu
Optoelectronics Joint Research Laboratory
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Fukunaga T
New Cosmos Electric Co. Ltd. Osaka Jpn
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Nakashima H
Osaka Univ. Osaka Jpn
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