Low-Energy Electron Diffraction Analysis on Initial Stages of Ge Growth on Si(111)(1×1) -As and As-Desorbed Si(111)(1×1) Surfaces
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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MAEHASHI Kenzo
The Institute of Scientific and Industrial Research, Osaka University
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Abe Daisuke
The Institute Of Scientific And Industrial Research Osaka University
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Yasuda Hiroaki
Semiconductor Device Engineering Laboratory Toshiba Corp.
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Maehashi K
The Institute Of Scientific And Industrial Research Osaka University
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Maehashi Kenzo
The Institute Of Scientific And Industrial Research Osaka University
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NAKASHIMA Hisao
The Institute of Scientific and Industrial Research, Osaka University
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HASEGAWA Shigehiko
The Institute of Scientific and Industrial Research,Osaka University
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Yasuda H
The Institute Of Scientific And Industrial Research Osaka University
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YASUDA Haruyuki
The Institute of Scientific and Industrial Research, Osaka University
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Nakashima H
Hyogo University
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Nakashima Hideharu
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Nakashima Hisao
The Institute Of Scientific And Industrial Research Osaka University
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Hasegawa Shigehiko
The Institute Of Scientific And Industrial Research Osaka University
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