Aligned Single-Walled Carbon Nanotube Arrays on Patterned SiO2/Si Substrates
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概要
- 論文の詳細を見る
Horizontally aligned single-walled carbon nanotubes (SWNTs) were fabricated on patterned SiO2/Si substrates with groove-and-terrace or half-cylinder structures by electron-beam lithography and reactive ion etching. Scanning electron microscopy observation reveals that the SWNTs were aligned in the direction parallel to the patterned structures and were preferentially grown along the edges of terraces or along the sidewalls of the half cylinders. The results are consistent with calculations obtained using the Casimir–Polder potential between the SWNTs and the patterned substrates. This method will be promising to control the directions of the SWNTs on SiO2/Si substrates.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-06-25
著者
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Maehashi Kenzo
The Institute Of Scientific And Industrial Research Osaka University
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Ohno Yasuhide
The Institute Of Scientific And Industrial Research Osaka University
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Koichi Inoue
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Kazuhiko Matsumoto
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Shin Iwasaki
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Iwasaki Shin
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Kenzo Maehashi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Takaomi Kishimoto
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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