Al Growth on Si(111)(√<3>×√<3>)-Ga Surfaces at Room Temperature
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概要
- 論文の詳細を見る
The initial stages of Al growth on Si(111)(√<3>×√<3>)-Ga surfaces at room temperature (RT) have been studied by reflection high-energy electron diffraction and X-ray photoemission spectroscopy. The Al-Ga exchange reaction takes place, resulting in the formation of Al-Si bonds at the interface. Al films contain both (111)- and (100)-oriented structures. Most of the Ga atoms segregate at surfaces of the Al overlayer from the very initial stage, even at RT.
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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Maehashi Kenzo
The Institute Of Scientific And Industrial Research Osaka University
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NAKASHIMA Hisao
The Institute of Scientific and Industrial Research, Osaka University
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Nakashima Hisao
The Institute Of Scientific And Industrial Research Osaka University
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Katsuki Hiroyuki
The Institute of Scientific and Industrial Research, Osaka University
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Katsuki Hiroyuki
The Institute Of Scientific And Industrial Research Osaka University
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