Room-Temperature Carbon Nanotube Single-Electron Transistors Fabricated Using Defect-Induced Plasma Process
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概要
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We propose and demonstrate the “defect-induced plasma process” for the fabrication of the room-temperature-operated carbon nanotube single-electron transistors (CNT-SETs) with the SiO2 protection films on the CNT channels. After introducing of defects in the CNT channels by O2 plasma irradiation through the SiO2 protection films, multi-quantum dots were fabricated in the CNT channels. The electrical properties of the CNT-SETs suggested that the oscillation in the drain currents as a function of the gate voltage was observed at room temperature, as a result of the Coulomb blockade effect. Moreover, we report that the yield of the CNT-SETs depended on the thickness of the SiO2 protection films on the CNT channels for the purpose of obtaining a high yield of CNT-SETs. The results indicate that the high yield of the CNT-SETs is as high as approximately 35% when the SiO2 protection film thickness is 60 nm. Consequently, the defect-induced plasma process is useful for obtaining the high yield efficiency of CNT-SETs operating at room temperature.
- 2008-04-25
著者
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Maehashi Kenzo
The Institute Of Scientific And Industrial Research Osaka University
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Ohno Yasuhide
The Institute Of Scientific And Industrial Research Osaka University
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Kamimura Takafumi
The Institute Of Scientific And Industrial Research Osaka University
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Matsumoto Kazuhiko
The Institute Of Scientific And Industrial Research Osaka University
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Kamimura Takafumi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Iwasaki Shin
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Maeda Masatoshi
Department of Applied Physics, University of Tsukuba, 1-1-1 Tenoudai, Tsukuba, Ibaraki 305-8577, Japan
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