Ohno Yasuhide | The Institute Of Scientific And Industrial Research Osaka University
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概要
関連著者
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Ohno Yasuhide
The Institute Of Scientific And Industrial Research Osaka University
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Maehashi Kenzo
The Institute Of Scientific And Industrial Research Osaka University
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Matsumoto Kazuhiko
The Institute Of Scientific And Industrial Research Osaka University
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Inoue Koichi
The Institute For Solid State Physics University Of Tokyo
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Kazuhiko Matsumoto
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Koichi Inoue
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Okamoto Shogo
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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MAEHASHI Kenzo
The Institute of Scientific and Industrial Research, Osaka University
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MATSUMOTO Kazuhiko
The Institute of Scientific and Industrial Research, Osaka University
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OHNO Yasuhide
The Institute of Scientific and Industrial Research, Osaka University
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INOUE Koichi
The Institute of Scientific and Industrial Research, Osaka University
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Yamamoto Kazuhiro
Crest/jst
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Kamimura Takafumi
The Institute Of Scientific And Industrial Research Osaka University
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Kenzo Maehashi
The Institute Of Scientific And Industrial Research Osaka University
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Ohno Yasuhide
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Hakamata Yasufumi
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Ohori Takahiro
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Yamamoto Yasuki
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Negishi Ryota
Department of Applied Physics, Osaka University, Suita, Osaka 560-0871, Japan
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Kobayashi Yoshihiro
Department of Applied Physics, Osaka University, Suita, Osaka 565-0871, Japan
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Iwasaki Shin
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Matsumoto Kazuhiko
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Kenzo Maehashi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Takaomi Kishimoto
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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前橋 兼三
阪大産研
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Matsumura Hideki
Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn
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松本 和彦
大阪大 産科研
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大野 恭秀
大阪大学産業科学研究所
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前橋 兼三
大阪大学産業科学研究所
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井上 恒一
大阪大学産業科学研究所
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松本 和彦
大阪大学産業科学研究所
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大堀 貴大
大阪大学産業科学研究所
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永曽 悟史
大阪大学産業科学研究所
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Nakamura T
National Defense Acad. Kanagawa Jpn
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KAMINISHI Daisuke
The Institute of Scientific and Industrial Research, Osaka University
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OZAKI Hirokazu
The Institute of Scientific and Industrial Research, Osaka University
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SERI Yasuhiro
Japan Advanced Institute of Science and Technology
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MASUDA Atsushi
Japan Advanced Institute of Science and Technology
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NIKI Toshikazu
Ishikawa Seisakusho, Ltd.
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Katsura Taiji
The Institute Of Scientific And Industrial Research Osaka University
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Ozaki Hirokazu
The Institute Of Scientific And Industrial Research Osaka University
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KAMIMURA Takafumi
The Institute of Scientific and Industrial Research, Osaka University
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Kaminishi Daisuke
The Institute Of Scientific And Industrial Research Osaka University
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Nakamura T
Department Of Earth And Ocean Sciences National Defense Academy
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Matsumura Hideki
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
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Niki Toshikazu
Ishikawa Seisakusho Ltd.
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Masuda A
Japan Advanced Institute Of Science And Technology
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FUJIWARA Yasuyuki
The Institute of Scientific and Industrial Research, Osaka University
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Fujiwara Yasuyuki
The Institute Of Scientific And Industrial Research Osaka University
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Matsumura Hideki
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST)
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Yasuhide Ohno
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Ohno Yasuhide
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Nagaso Satoshi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Takahiro Ohori
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Yasuki Yamamoto
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Matsumoto Kazuhiko
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Kishimoto Takaomi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Inoue Koichi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Inoue Koichi
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Sofue Yasuyuki
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Katsura Taiji
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Hirano Hiroki
Department of Applied Physics, Osaka University, Suita, Osaka 565-0871, Japan
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Haehashi Kenzo
The Institute of the Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Kamimura Takafumi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Shin Iwasaki
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Matsumoto Kazuhiko
The Institute of the Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Maeda Masatoshi
Department of Applied Physics, University of Tsukuba, 1-1-1 Tenoudai, Tsukuba, Ibaraki 305-8577, Japan
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Gumi Kenta
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Asai Yoshihiro
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Tsuji Tomoki
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Tomoki Tsuji
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Negishi Ryota
Department of Applied Physics, Osaka University, Suita, Osaka 565-0871, Japan
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Satoshi Nagaso
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Ohno Yasuhide
The Institute of the Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Maehashi Kenzo
The Institute of the Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Ikuta Takashi
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Zaifuddin Nursakinah
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Miyake Masato
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Greenwood Paul
AIXTRON Ltd., Cambridge CB24 4FQ, United Kingdom
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Teo Kenneth
AIXTRON Ltd., Cambridge CB24 4FQ, United Kingdom
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Fujii Yusuke
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
著作論文
- カーボンナノチューブ電界効果トランジスタを用いた不揮発性メモリの開発(ナノ機能性2,機能ナノデバイス及び関連技術)
- Air-Stable p-Type and n-Type Carbon Nanotube Field-Effect Transistors with Top-Gate Structure on SiN_x Passivation Films Formed by Catalytic Chemical Vapor Deposition
- Raman Scattering of Single-Walled Carbon Nanotubes Implanted with Ultra-Low-Energy Oxygen Ions
- Carbon nanotube Fabry-Perot device for detection of multiple single charge transitions
- Transition between particle nature and wave nature in single-walled carbon nanotube device
- Position-Controlled Growth of Single-Walled Carbon Nanotubes by Laser-Irradiated Chemical Vapor Deposition
- External-Noise-Induced Small-Signal Detection with Solution-Gated Carbon Nanotube Transistor
- Label-free aptamer-based immunoglobulin sensors using graphene field-effect transistors (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Single-Hole Charging and Discharging Phenomena in Carbon Nanotube Field-Effect-Transistor-Based Nonvolatile Memory
- Logic Gates Based on Carbon Nanotube Field-Effect Transistors with SiNx Passivation Films
- Raman Scattering of Single-Walled Carbon Nanotubes in Early Growth Stages Using Laser-Irradiated Chemical Vapor Deposition
- Carbon Nanotube-Based Floating Gate Memories with High-k Dielectrics (Special Issue : Microprocesses and Nanotechnology)
- Room-Temperature Coulomb Oscillations of Carbon Nanotube Field-Effect Transistors with Oxidized Insulators
- Room-Temperature Carbon Nanotube Single-Electron Transistors Fabricated Using Defect-Induced Plasma Process
- Carrier Transport Properties of the Field Effect Transistors with Graphene Channel Prepared by Chemical Vapor Deposition
- Direct Synthesis of Graphene on SiO2 Substrates by Transfer-Free Processes
- Immunosensors Based on Graphene Field-Effect Transistors Fabricated Using Antigen-Binding Fragment
- High-Performance Carbon Nanotube Field-Effect Transistors with Local Electrolyte Gates
- Electrical Detection of Negatively Charged Proteins Using n-Type Carbon Nanotube Field-Effect Transistor Biosensors
- Highly Sensitive Electrical Detection of Sodium Ions Based on Graphene Field-Effect Transistors
- Raman Scattering of Single-Walled Carbon Nanotubes Implanted with Ultra-Low-Energy Oxygen Ions
- Robust Noise Characteristics in Carbon Nanotube Transistors Based on Stochastic Resonance and Their Summing Networks
- Thickness Control of Graphene Overlayer via Layer-by-Layer Growth on Graphene Templates by Chemical Vapor Deposition
- pH Sensor Based on Chemical-Vapor-Deposition-Synthesized Graphene Transistor Array
- Aligned Single-Walled Carbon Nanotube Arrays on Patterned SiO2/Si Substrates
- Direct Electrical Detection of DNA Hybridization Based on Electrolyte-Gated Graphene Field-Effect Transistor
- Direct Electrical Detection of DNA Hybridization Based on Electrolyte-Gated Graphene Field-Effect Transistor (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)