Logic Gates Based on Carbon Nanotube Field-Effect Transistors with SiNx Passivation Films
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概要
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We demonstrated logic gates based on complementary carbon nanotube field-effect transistors (CNT-FETs) with SiNx passivation films deposited by catalytic chemical vapor deposition. The carrier type of CNT-FETs was controlled by forming SiNx passivation films. Electrical measurements revealed that the p-type characteristics of CNT-FETs were converted to n-type characteristics after the deposition of SiNx passivation films. Then, the n-type CNT-FETs with SiNx passivation films were reconverted to p-type CNT-FETs by annealing in N2 atmosphere. As a consequence, complementary voltage inverters comprising p- and n-type CNT-FETs with SiNx passivation films were demonstrated on the same SiO2 substrate by conventional photolithography and lift-off techniques. Moreover, the static transfer and dynamic characteristics of the CNT-FET-based inverters were investigated. It was found that a gain of approximately 3 was achieved and that the device was switched properly at frequencies of up to 100 Hz.
- 2010-06-25
著者
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Maehashi Kenzo
The Institute Of Scientific And Industrial Research Osaka University
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Ohno Yasuhide
The Institute Of Scientific And Industrial Research Osaka University
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Koichi Inoue
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Kazuhiko Matsumoto
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Kishimoto Takaomi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Takaomi Kishimoto
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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