pH Sensor Based on Chemical-Vapor-Deposition-Synthesized Graphene Transistor Array

スポンサーリンク

概要

• 論文の詳細を見る

• We have successfully fabricated a pH-sensor array based on chemical-vapor-deposition (CVD)-synthesized graphene. As large-scale monolayer graphene is synthesized by this method, the size and the position of graphene can be controlled. Therefore, after transferring graphene onto SiO<inf>2</inf>/Si substrates, a graphene field-effect transistor (FET) array was produced. The sensing characteristics of the CVD-synthesized graphene-based device were investigated using three buffer solutions with different pH values (pHs 4.0, 6.8, and 9.3). The electrical measurements reveal that for most of the graphene FETs in the array, a similar stepwise increment in drain current was observed upon the introduction of each buffer solution with increasing pH value sequence. This will lead to the realization of the fabrication of multiplex hand-held chemical and biological sensors based on CVD-synthesized graphene.

• 2013-06-25

著者

• Maehashi Kenzo

  The Institute Of Scientific And Industrial Research Osaka University

• Ohno Yasuhide

  The Institute Of Scientific And Industrial Research Osaka University

• Matsumoto Kazuhiko

  The Institute Of Scientific And Industrial Research Osaka University

• Ohno Yasuhide

  The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan

• Okamoto Shogo

  The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan

• Matsumoto Kazuhiko

  The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan

• Ikuta Takashi

  The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan

• Zaifuddin Nursakinah

  The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan

• Miyake Masato

  The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan

• Greenwood Paul

  AIXTRON Ltd., Cambridge CB24 4FQ, United Kingdom

• Teo Kenneth

  AIXTRON Ltd., Cambridge CB24 4FQ, United Kingdom

関連論文

• カーボンナノチューブ電界効果トランジスタを用いた不揮発性メモリの開発(ナノ機能性2,機能ナノデバイス及び関連技術)
• Microfluidic Amperometric Biochips Based on Carbon Nanotube Arrayed Electrodes
• DNA Aptamer-Based Biosensing of Immunoglobulin E Using Carbon Nanotube Field-Effect Transistors
• High-Sensitive and Label-Free Detection of Biomolecules Using Single-Walled Carbon Nanotube Modified Microelectrodes
• 1B16-5 Label-free electrochemical biosensor based on carbon nanotubes
• Direct Ultrasensitive DNA Sensors Based on Carbon Nanotube Field-Effect Transistors
• Ultrasensitive Detection of DNA Hybridization Using Carbon Nanotube Field-Effect Transistors
• Air-Stable p-Type and n-Type Carbon Nanotube Field-Effect Transistors with Top-Gate Structure on SiN_x Passivation Films Formed by Catalytic Chemical Vapor Deposition
• Raman Scattering of Single-Walled Carbon Nanotubes Implanted with Ultra-Low-Energy Oxygen Ions
• Carbon nanotube Fabry-Perot device for detection of multiple single charge transitions
• Transition between particle nature and wave nature in single-walled carbon nanotube device
• Formation of InAs Wires and Dots on Vicinal GaAs (110) Surfaces with Giant Steps by Molecular Beam Epitaxy
• Low-Energy Electron Diffraction Analysis on Initial Stages of Ge Growth on Si(111)(1×1) -As and As-Desorbed Si(111)(1×1) Surfaces
• Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
• Initial Stages of GaAs MBE Growth on Si(111)(√3×√3)-Ga Surfaces
• Relaxation Mechanisms of Electronic States in CdSe/ZnSe Quantum Dots Studied by Selectively Excited Photoluminescence Measurements : Semiconductors
• Transmission Electron Microscopy and Photoluminescence Characterization of InAs Quantum Wires on Vicinal GaAs (110) Substrates by Molecular Beam Epitaxy
• Molecular Beam Epitaxial Growth of ZnSe Films on Vicinal GaAs(110) Substrates
• Electronic Structures of Porous Si Studied by Core-Level Absorption and Photoemission Spectroscopy
• Charge-Balanced Heteroepitaxial Growth of GaAs on Si
• Spectral and Spatial Behavior of Raman Scattering and Photoluminescence from Porous Silicon
• Molecular Beam Epitaxial Growth and Characterization of GaAs Films on Thin Si Substrates
• Position-Controlled Growth of Single-Walled Carbon Nanotubes by Laser-Irradiated Chemical Vapor Deposition
• External-Noise-Induced Small-Signal Detection with Solution-Gated Carbon Nanotube Transistor
• Al Growth on Si(111)(√×√)-Ga Surfaces at Room Temperature
• Label-free aptamer-based immunoglobulin sensors using graphene field-effect transistors (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
• Single-Hole Charging and Discharging Phenomena in Carbon Nanotube Field-Effect-Transistor-Based Nonvolatile Memory
• Logic Gates Based on Carbon Nanotube Field-Effect Transistors with SiNx Passivation Films
• Robust Noise Modulation of Nonlinearity in Carbon Nanotube Field-Effect Transistors
• Raman Scattering of Single-Walled Carbon Nanotubes in Early Growth Stages Using Laser-Irradiated Chemical Vapor Deposition
• Carbon Nanotube-Based Floating Gate Memories with High-k Dielectrics (Special Issue : Microprocesses and Nanotechnology)
• Microfluidic and Label-Free Multi-Immunosensors Based on Carbon Nanotube Microelectrodes
• Carbon Nanotube Amperometric Chips with Pneumatic Micropumps
• Room-Temperature Coulomb Oscillations of Carbon Nanotube Field-Effect Transistors with Oxidized Insulators
• Room-Temperature Carbon Nanotube Single-Electron Transistors Fabricated Using Defect-Induced Plasma Process
• Field-Emission Characteristics of Carbon Nanotube Single Tip Grown on Si Cone
• Carrier Transport Properties of the Field Effect Transistors with Graphene Channel Prepared by Chemical Vapor Deposition
• Direct Synthesis of Graphene on SiO2 Substrates by Transfer-Free Processes
• Immunosensors Based on Graphene Field-Effect Transistors Fabricated Using Antigen-Binding Fragment
• High-Performance Carbon Nanotube Field-Effect Transistors with Local Electrolyte Gates
• Electrical Detection of Negatively Charged Proteins Using n-Type Carbon Nanotube Field-Effect Transistor Biosensors
• Electrical Heating Process for p-Type to n-Type Conversion of Carbon Nanotube Field Effect Transistors
• Highly Sensitive Electrical Detection of Sodium Ions Based on Graphene Field-Effect Transistors
• Raman Scattering of Single-Walled Carbon Nanotubes Implanted with Ultra-Low-Energy Oxygen Ions
• Robust Noise Characteristics in Carbon Nanotube Transistors Based on Stochastic Resonance and Their Summing Networks
• Thickness Control of Graphene Overlayer via Layer-by-Layer Growth on Graphene Templates by Chemical Vapor Deposition
• pH Sensor Based on Chemical-Vapor-Deposition-Synthesized Graphene Transistor Array
• Aligned Single-Walled Carbon Nanotube Arrays on Patterned SiO2/Si Substrates
• Direct Electrical Detection of DNA Hybridization Based on Electrolyte-Gated Graphene Field-Effect Transistor
• Direct Electrical Detection of DNA Hybridization Based on Electrolyte-Gated Graphene Field-Effect Transistor (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)

もっと見る 閉じる

スポンサーリンク